SPI15N65C3XKSA1 Allicdata Electronics
Allicdata Part #:

SPI15N65C3XKSA1-ND

Manufacturer Part#:

SPI15N65C3XKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 15A TO262-3
More Detail: N-Channel 650V 15A (Tc) 156W (Tc) Through Hole PG-...
DataSheet: SPI15N65C3XKSA1 datasheetSPI15N65C3XKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: CoolMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
FET Feature: --
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Description

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A SPi15N65C3XKSA1 is a transistor. It is a type of Field Effect Transistor (FET). A FET is a type of transistor that uses a semiconductor channel to modulate the current flow. The SPi15N65C3XKSA1 is a single-channel MOSFET, meaning it can be used to either control the on and off states of an electrical current or to amplify an electrical current. In either case, it is necessary to understand both the application field and working principle of the SPi15N65C3XKSA1.

The SPi15N65C3XKSA1 can be used in a wide range of applications. One of the primary application fields for this device is in telecoms and datacom equipment. It is commonly used as a switching device in these applications, allowing the conversion of low power transmitted signals into higher powered signals. The SPi15N65C3XKSA1 is also used in a variety of consumer electronics such as CD players, digital recorders and MP3 players. It can also be used in medical and aerospace equipment.

The SPi15N65C3XKSA1 works on the principle of a MOSFET. A MOSFET is a type of transistor that has a gate electrode that is insulated from the source and drain electrodes. When the gate voltage is increased, the current between the source and the drain terminals increases. This results in a higher voltage being applied between the source and the drain, thus allowing for switching. The amount of current allowed to flow between the source and drain electrodes is controlled by the gate voltage, hence the name field effect transistor.

The SPi15N65C3XKSA1 is unique in that it has an enhanced channel punch-through. This means that it can handle higher voltage and current than some other MOSFET components. The SPi15N65C3XKSA1 also has a low input capacitance, allowing it to switch quickly and efficiently. The low input capacitance and increased voltage handling also make it well-suited for use in high frequency applications.

The SPi15N65C3XKSA1 is a versatile device, and can be used in a variety of applications. It is commonly used in telecoms and datacom equipment, consumer electronics, medical equipment, and aerospace equipment. Its high voltage and current handling capabilities, combined with its low input capacitance and enhanced channel punch-through, make it an ideal choice for many different applications. No matter the application, understanding the application field and working principle of the SPi15N65C3XKSA1 is essential for proper and safe operation.

The specific data is subject to PDF, and the above content is for reference

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