Allicdata Part #: | SPI100N03S2L-03-ND |
Manufacturer Part#: |
SPI100N03S2L-03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 100A TO-262 |
More Detail: | N-Channel 30V 100A (Tc) 300W (Tc) Through Hole PG-... |
DataSheet: | SPI100N03S2L-03 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SPI100N03S2L-03 is a simple, yet highly advanced and powerful system. The device is a vertical-channel field-effect transistor (FET) operating on a single-channel power output.
This specialized device has its own specific application fields and working principles.
Application Fields:
- VDS SD Type MOSFETS – These devices are suitable for use in power devices requiring the switching of high-voltage currents from a single output.
- VDS SC Type MOSFETS – These devices are suitable for use in circuits for noise reduction, switch-mode power supplies, switching regulators, active filters, and pulse generators.
Working Principles:
- Charge Storage – This is accomplished by storing electrical charge on a capacitor electrode, which forms the gate region when the FET is turned on by a voltage source.
- Capacitance Multiplication – This is accomplished by using the capacitor in conjunction with another capacitor. This creates a larger channel current than the channel current provided by the single capacitor.
- Minimum Voltage Drop – This is accomplished by using a low-impedance MOSFET, which reduces the resistance of the channel for a given supply voltage and decreases the voltage drop across the device.
- High Speed Transistors – This is accomplished by using high-speed transistors and fast switching capacitors, which results in high speed switching.
The SPI100N03S2L-03 is an ideal device for a variety of applications. It is suitable for use in power converters, low noise control circuits, audio amplifiers, and digital processing systems. It offers high speed switching, low voltage drop, high charge storage, and capacitance multiplication.
The SPI100N03S2L-03 is the perfect choice for a wide range of applications that require a simple yet powerful and reliable system. The device offers superior performance, high efficiency, and superior reliability.
The specific data is subject to PDF, and the above content is for reference
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