Allicdata Part #: | SPI11N60CFDHKSA1-ND |
Manufacturer Part#: |
SPI11N60CFDHKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 11A TO-262 |
More Detail: | N-Channel 650V 11A (Tc) 125W (Tc) Through Hole PG-... |
DataSheet: | SPI11N60CFDHKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 500µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 440 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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SPI11N60CFDHKSA1 is a 600V n-channel field-effect transistor (FET) with low gate charge and low on-state resistance. It is one of the most popular components in the range of 600V FETs and is widely used in a range of applications. This article will provide an overview of the application field and working principle of SPI11N60CFDHKSA1.
Applications
SPI11N60CFDHKSA1 can be used in a range of applications, primarily in industrial and automotive electronic circuits. Due to their high current requirements, they are particularly well suited to powering high-demand devices such as servomotors and other equipment that requires a high amount of current. They are also often used as fast switch devices in high frequency circuits.
SPI11N60CFDHKSA1 are also frequently used in motor control and power conversion. Their high-current capacity and low resistance when on make them ideal for controlling the current in high power circuit applications such as the control of voltages in systems for direct and alternating current. This can be seen in Uninterruptible Power Supplies (UPS), solar power converters and voltage and current controllers.
Furthermore, SPI11N60CFDHKSA1 can be used as power switches in switching power supply applications due to their ability to handle very large currents. They are often used in applications that require high frequency switching, such as for LED lighting or for AC and DC power delivery to high power equipment.
Working Principle
The working principle of SPI11N60CFDHKSA1 is based on the transfer of charge carriers. When a voltage is applied to it, the device begins to conduct by allowing a flow of current carriers. The amount of current that can be conducted is mainly determined by the gate voltage, which can be used to control the flow of carriers. This makes it a very useful device for controlling current in a wide range of applications.
The SPI11N60CFDHKSA1 consists of a source electrode, drain electrode and gate electrode. The source and drain electrodes are responsible for connecting the device to the circuit, whereas the gate electrode is used for controlling the amount of current flowing through the device. When the gate voltage is increased, more carriers are allowed to pass, resulting in an increase in the current.
In addition to its use as a power switch, the SPI11N60CFDHKSA1 is also widely used for its high-frequency switching capabilities. The switching frequency of this device can be as high as 600 MHz, which makes it suitable for applications such as RF switching and filtering. Its low gate charge and low on-state resistance also make it suitable for use in high-current applications.
Conclusion
In conclusion, SPI11N60CFDHKSA1 is a versatile FET device that is used in a range of industrial and automotive applications. From motor control to LED lighting and power conversion, this device is highly effective due to its ability to control current flow, high-frequency switching capability and low gate charge and on-state resistance.
The specific data is subject to PDF, and the above content is for reference
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