SPI11N60C3XKSA1

Series:	CoolMOS™
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	380 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 25V
FET Feature:	--
Power Dissipation (Max):	125W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3-1
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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SPI11N60C3XKSA1 Application Field and Working Principle.

The SPI11N60C3XKSA1 is a silicon carbide power MOSFET for motor control applications. It has multiple advantages over standard silicon MOSFETs, including higher switching frequency, higher maximum junction temperature, and longer lifetime. It also commands lower losses at given operating temperature and frequency, providing higher efficiency and less heat dissipation.In this section, we will discuss the SPI11N60C3XKSA1 application field and its working principle.

Application Field

The SPI11N60C3XKSA1 is designed for use in automotive, consumer, and industrial applications, and is specifically suited for high-power motor control and welding applications. Its broad range of features makes it suitable for use in a wide range of applications, including high-frequency drives, power supplies, server power supplies, railroad engineering, and aerospace equipment. It can also be used as a gate driver or to provide power and control signals in a variety of power conversion circuits. Its low switching losses, improved conduction performance, and stable, long-term performance make it ideal for use in demanding industrial applications.

Working Principle

The SPI11N60C3XKSA1 is a power MOSFET, which is a type of transistor. It is made up of a silicon-carbide based material, and contains an easy-to-control gate for switching on and off. When the gate is positively charged, the device is on and passes current. When the gate is not positively charged, the device is off, and the current flow is blocked. The voltage at which the transistor turns on and off, called the threshold value, is very low in MOSFETs due to their nature. The SPI11N60C3XKSA1 has an on-resistance of 11 milliohms and an off-state leakage current of 0.1mA, making it highly efficient and reliable for motor control applications. Additionally, its turn-on and turn-off times are extremely short, providing improved frequency response and faster switching speeds. The SPI11N60C3XKSA1 also works well for repetitive switching applications due to its high avalanche energy and fast recovery time. Its avalanche energy is rated at 8mJ, which allows it to operate in highly demanding environments without suffering damage.

Conclusion

The SPI11N60C3XKSA1 is a power MOSFET transistor designed for motor control, welding, and automotive applications. It is capable of switching currents up to 600A and has an on-resistance of only 11 milliohms. It provides improved switching speed, low losses, high reliability and long life in industrial applications. Its avalanche energy is also rated at 8mJ, making it suitable for repetitive switching applications.

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