SPI10N10L

Vgs(th) (Max) @ Id:	2V @ 21µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	PG-TO262-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	444pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	154 mOhm @ 8.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10.3A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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SPI10N10L Application Field and Working Principle

The SPI10N10L is a type of Field Effect Transistor (FET) which has a number of useful applications. It was developed to be used in high speed switching and short-circuit protection in power supplies and other power-management systems. In this article, we will discuss the application field and working principle of the SPI10N10L.

Application Field of the SPI10N10L

The SPI10N10L is a type of insulated-gate bipolar transistor (IGBT) which has superior quality characteristics compared to other FETs. These characteristics include lower switching losses, higher current carrying capacity, and higher avalanche capability than other types of FETs. This type of FET is suitable for applications such as switching power supplies, automotive electronics, industrial motors, and more. The SPI10N10L is also suitable for high-speed switching applications and short-circuit protection in power supplies and other power-management systems.

Working Principle of the SPI10N10L

The SPI10N10L is a field effect transistor which creates an electronic switch using a charge-carrier channel between its source and drain electrodes. This type of FET is composed of three terminals – source, gate, and drain. The source, gate, and drain terminals are connected to a semiconductor body and the source and drain electrodes are separated by a dielectric layer. The operation of the SPI10N10L involves the application of a voltage signal to the gate terminal. This voltage creates an electric field at the gate, which attracts charge carriers from the source electrode to the drain electrode, thus creating a conductive channel between the two electrodes. The conductive channel is referred to as the charge-carrier channel.The charge-carrier channel is a low resistance path through which current can flow from the source to the drain. This charge-carrier channel can be compared to an electronic valve or switch, which is switched on and off by applying a voltage signal to the gate. By changing the voltage signal applied to the gate, the charge-carrier channel can be adjusted accordingly, thus allowing the user to control the flow of current through the SPI10N10L.

Conclusion

In conclusion, the SPI10N10L is a type of insulated-gate bipolar transistor (IGBT) which has a number of useful applications, such as switching power supplies, automotive electronics, industrial motors and more. It has superior quality characteristics compared to other FETs, including lower switching losses, higher current carrying capacity, and higher avalanche capability. The operation of the SPI10N10L involves the application of a voltage signal to the gate terminal which creates an electric field at the gate, thus creating a conductive channel between the source and drain electrodes.

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