SPI12N50C3HKSA1

The SPI12N50C3HKSA1 is a single n-channel enhancement-mode Power MOSFET manufactured by Vishay Siliconix. It is designed to be used in high-side, low-side and bidirectional applications, with a low drain-source on-resistance (RDS(on)) and fast switching capability. The parts come in an industry standard package, allowing it to be readily integrated into a wide variety of applications.

Application Field and Working Principle

The SPI12N50C3HKSA1 is suitable for many applications, ranging from synchronous rectification in power-conversion circuits, low-loss switching in power amplifiers, to DC-DC converters and motor drives. In addition, its wide operating range makes it suitable for portabilized applications where product space and efficiency are in high demand.

A MOSFET operates by using the voltage difference between its gate and source terminals to allow or inhibit the flow of current between the drain and source terminals. This type of transistor is known as an enhancement-mode MOSFET, meaning that no gate voltage (VGS) is required to turn the device off. Inverting the voltage to the gate, or applying 0V to the gate will activate the device, allowing current to flow between the drain and source terminals.

The SPI12N50C3HKSA1 is a single n-channel part, meaning that the gate is designed to be driven by a negative (low) voltage. The gate driver circuitry needed to drive the device must be capable of delivering a minimum of 3V to the gate, and a maximum of 12V to ensure correct operation of the device.

The SPI12N50C3HKSA1 is designed with a VDSS (Drain-Source Voltage) rating of 500V, and a RDS(on) of 3 mΩ at 10V. This combination of high voltage and low on-resistance makes it ideal for high-efficiency low-loss power switches with fast switching capability.

This device also has a rated total gate charge (Qg) of 10 nC, meaning that it is capable of switching quickly, and can handle high speed switching operations. This makes it suitable for switching applications where speed is of the essence, such as in motor drives and DC-DC converters.

The SPI12N50C3HKSA1 is also thermally robust, with a Maximum Junction Temperature rating of 175°C. This rating ensures that the device does not degrade under high temperature conditions, making it ideal for operation in harsh environments, such as outdoor or industrial applications.

In summary, the SPI12N50C3HKSA1 is well suited for use in high-side, low-side, and bidirectional switching applications. Its wide operating range and high heat dissipation capabilities make it suitable for use in a variety of applications, such as synchronous rectification, low-loss switching, and high-speed switching operations. It is also robust enough to be used in a variety of environments, and its low on-resistance and fast switching capabilities make it ideal for use in applications where high efficiency and low-loss are desired.