SPI11N65C3XKSA1

Vgs(th) (Max) @ Id:	3.9V @ 500µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	PG-TO262-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	380 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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SPI11N65C3XKSA1 is a high-performance N-Channel MOSFET device that is designed for use in high-reliability and high-performance systems. It is an advanced device that utilizes new high-voltage (HV) MOSFET technology to achieve superior performance and ruggedness. This device is available in a few different configurations and sizes, allowing it to better suit the requirements of any application.The SPI11N65C3XKSA1 is designed to be utilized in a wide variety of applications. It provides superior power switching performance in high-reliability and high-performance systems. It is a low-junction-capacitance device, offering improved switching speed, enabling circuit designs requiring reliable high-speed switching. This device also offers superior current handling capability and very low thermal resistance for superior heat dissipation.The SPI11N65C3XKSA1 features an advanced ESD (electrostatic discharge) protection, offering robust protection and improved reliability. This device is ideal for use in automotive, industrial, and other high-reliability and high-performance systems. It is an MMOSFET (metal-oxide semiconductor FET) type with an N-Channel construction.The SPI11N65C3XKSA1 is essentially a three-terminal network, whose output is dependent on the current that flows through the central terminal. It consists of three regions- drain, source, and the gate, connected together. The gate region is comprised of a deposit of conducting material that functions as a control electrode. When a higher voltage is applied to the gate, more electrons are attracted to the region, and a low-resistance current flows through it. When the voltage is removed, the current path is interrupted, and no current flows.The working principle of SPI11N65C3XKSA1 can be described as follows: When a positive voltage is applied to the gate terminal of the device, a depletion layer is created between the source and drain terminals. This layer limits the current flow from the source to the drain and causes the device to be in an ‘on’ state. When the gate voltage is removed, the depletion layer collapses, and current does not flow from the source to the drain, resulting in the device being in an ‘off’ state.SPI11N65C3XKSA1 is a rugged, high-performance device suitable for use in a variety of applications. As an N-Channel MOSFET, it has better current handling capabilities when compared to P-Channel MOSFETs. This device is used for power switching in high-reliability and high-performance systems, and its ESD protection feature is advantageous for protection against external currents and noise. Its low thermal resistance and high-speed switching make it an ideal choice in applications requiring reliable high-speed switching.

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