Allicdata Part #: | SPI11N65C3HKSA1-ND |
Manufacturer Part#: |
SPI11N65C3HKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 11A TO-262 |
More Detail: | N-Channel 650V 11A (Tc) 125W (Tc) Through Hole PG-... |
DataSheet: | SPI11N65C3HKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.9V @ 500µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPI11N65C3HKSA1 is one of the most widely used single-source field effect transistors (FETs). It is designed to provide high input impedance, high current, and reliable operation in a wide variety of applications. This article will discuss the applications, design, working principle, and key features of the SPI11N65C3HKSA1.
The SPI11N65C3HKSA1 is a single source FET which can be used in a variety of applications. It is commonly used in power circuits, such as switchgear, power supplies, and motor controllers. It is also used in digital circuits to amplify signals. In analog circuit applications, it is used to adjust the voltage level and to control switching.
The SPI11N65C3HKSA1 consists of a bipolar field effect transistor with a single layer of top and bottom contacts. It is capable of robust operation due to its high input impedance. The device has low capacitance, high transconductance, and low input bias current. In addition, it has a built-in body diode, which reduces switching losses and improves reliability.
The working principle of the SPI11N65C3HKSA1 is simple. When a voltage is applied to the gate terminal, a small electric field is created between the gate and the source. This electric field is then amplified due to the transconductance of the device. This amplified electrical field causes a current to flow between the source and drain terminals. The magnitude of the current is determined by the magnitude of the applied voltage.
The SPI11N65C3HKSA1 features several key benefits which make it attractive for various applications. One of these benefits is its low on-resistance. This makes it suitable for high-power applications, as it is able to deliver high current with minimal losses. It also has a low input bias current, which makes it suitable for digital circuits, as it does not draw excessive current from the supply. In addition, its low capacitance helps improve the speed of operation.
The SPI11N65C3HKSA1 is a robust and reliable transistor which is suitable for a wide variety of applications. Its range of features make it ideal for use in power systems, analog, and digital circuits. Its low input bias current and low capacitance make it suitable for digital circuits, while its high transconductance and low on-resistance make it suitable for power systems. These features, combined with its robust design, make it a highly versatile device.
The specific data is subject to PDF, and the above content is for reference
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