SPI15N60C3HKSA1

Vgs(th) (Max) @ Id:	3.9V @ 675µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	PG-TO262-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	156W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1660pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	63nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	280 mOhm @ 9.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction To SPI15N60C3HKSA1The SPI15N60C3HKSA1 is a semi-insulated gate type field-effect transistor (FET) made by an innovative design. This device was initially created in the United States, and has a certain unique edge to other similar components available on the market. It features the classic N-channel MOSFET design of having three terminals; the gate, source, and drain. This type of transistor is often utilized when high power switching needs to be achieved in an efficient manner. Application FieldThe most common application field for the SPI15N60C3HKSA1 is in high power switching and motor control. This FET is specifically designed for this purpose, as it is capable of operating at peak drain currents up to 15 A. On top of this, the transistor can also offer high switching performance, with an impressive maximum switching frequency of 17 MHz. As a result, the SPI15N60C3HKSA1 not only does well with motor control, but also excels in other uses that involve high frequency power delivery, such as for brushless DC motors, power converters, and industrial applications. Working PrincipleThe SPI15N60C3HKSA1 is an N-channel MOSFET, meaning that the transistor features an oxide-sealed gate electrode. When the switch is turned on, the gate electrode will be charged with a positive voltage, usually from 0 volts to a few volts. This charge will attract electrons from the source terminal, and allow them to flow to the drain terminal. This in turn will create an electric field through the N-type channel, and cause a current to flow between the drain and source. This is the internal working principle of the SPI15N60C3HKSA1. AdvantageDue to its unique design, the SPI15N60C3HKSA1 offers a few distinct advantages that other MOSFETs may not be able to provide. One of these advantages is its exceptionally high power dissipation, offering up to 116 watts at a temperature of 25°C. Additionally, the component has an extremely low gate-source leakage current, making it useful for high reliability circuits. Furthermore, there is a wide range of power supply voltage and drain-gate voltage ratings for this component, affording greater flexibility for many applications. DisadvantageLike other components, the SPI15N60C3HKSA1 is not without its shortcomings. One of the primary disadvantages of this component is its tendency to generate high amounts of heat when switching on high power. To prevent this, adequate heat sinks must be used in order to provide for safe operation. Additionally, the component suffers from some level of gate-drain capacitance, resulting in a slight delay in switching times. Other than these, there are not many disadvantages associated with this component. ConclusionThe SPI15N60C3HKSA1 is a unique MOSFET that is capable of providing extraordinarily high power delivery, as well as an impressive precision of operation. Due to the advantages offered by this device, it is employed in a wide range of applications, including motor control, brushless DC motors, power converters, and many others. Although there are a few disadvantages that should be addressed, they can easily be remedied with proper use of external components. All in all, the SPI15N60C3HKSA1 is an excellent choice for those needing high performance, reliable switching.

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