Allicdata Part #: | SPI100N08S2-07-ND |
Manufacturer Part#: |
SPI100N08S2-07 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 100A I2PAK |
More Detail: | N-Channel 75V 100A (Ta) Through Hole PG-TO262-3-1 |
DataSheet: | SPI100N08S2-07 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Rds On (Max) @ Id, Vgs: | -- |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Vgs (Max): | ±20V |
Vgs(th) (Max) @ Id: | -- |
Series: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SPI100N08S2-07is a Logic Level N-Channel Power MOSFET produced by Vishay Semiconductor, ideal for a variety of applications. This device offers low on-resistance at low gate voltages and low gate charge. It has a transient thermal resistance of 25C/W, making it suitable for high power applications when a plastic package is necessary, and is an essential part of any power supply design.
This power MOSFET is ideal for use in a variety of applications, such as motor control, power management, and switching circuitry. This device is capable of handling high current and voltage, as well as reaching high switching speeds, and is available in two package options. The device also features a low gate charge and high peak current ratings, making it an excellent choice for power supplies and motor control.
The SPI100N08S2-07\'s operating principle is based on the metal oxide semiconductor field-effect transistor (MOSFET). This transistor works by controlling the current between source and drain terminals using a third gate terminal. When a voltage is applied to the gate, an electric field is produced, resulting in the modulating of the current through the channel. This modulation controls the current between the drain and source, and changes the output characteristics of the device, allowing it to be used in certain applications.
The SPI100N08S2-07 is a great choice for switching applications where high current and low gate charge are required. It is also suitable for applications where low on-resistance is needed and a low gate voltage is desired. The device is highly efficient and comes in a small package, making it ideal for use in power supplies where space is an issue.
The SPI100N08S2-07 is a great choice for any application where performance and reliability are essential. Its low gate charge, high peak current rating, low on-resistance and small package size make it ideal for applications such as motor control, power management and switching circuitry. It is also suitable for use in a variety of other applications including mobile phones, computers, televisions and other power management applications.
The specific data is subject to PDF, and the above content is for reference
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