SPP17N80C3XKSA1 Allicdata Electronics
Allicdata Part #:

SPP17N80C3XKSA1-ND

Manufacturer Part#:

SPP17N80C3XKSA1

Price: $ 3.61
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V 17A TO-220AB
More Detail: N-Channel 800V 17A (Tc) 208W (Tc) Through Hole PG-...
DataSheet: SPP17N80C3XKSA1 datasheetSPP17N80C3XKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 3.28230
10 +: $ 2.92950
100 +: $ 2.40206
500 +: $ 1.94508
1000 +: $ 1.64042
Stock 1000Can Ship Immediately
$ 3.61
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SPP17N80C3XKSA1 is a high-voltage MOSFET that has been developed to serve as a switch in applications primarily related to power management, motor control, and driver circuits. It has a drain-source blocking voltage of 1700V that makes it a highly suitable option for a variety of applications, from LED lighting to high-end computing systems. The SPP17N80C3XKSA1 is an example of a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a high-performance, low-on-state resistance (RDSon), and low-capacitance transistor that bridges the gap between voltage and current. It is best suited for use in applications where power dissipation and reliability are of primary concern. The SPP17N80C3XKSA1 MOSFETs have an advanced internal design that combines advanced process technology and packaging design to ensure a long-term reliable switching performance.

The SPP17N80C3XKSA1 is a depletion-mode MOSFET, which means that it is normally ON and current flows when the gate voltage is zero. For this reason, it is important to note that the gate voltage should be held down to reduce the drain current. When the applied gate voltage is greater than the threshold voltage VGS(th), it turns the MOSFET OFF and current is blocked. This is known as the "cut-off" region. To turn the MOSFET ON again, the gate voltage must be returned to less than the threshold voltage. The MOSFET must remain in the OFF state in order to reduce power when the controller is shut down.

The SPP17N80C3XKSA1 is a single component that offers a unique blend of features and capabilities, making it suitable for a wide range of applications including power monitoring and motor control. Its low RDSon and low gate charge ensure less power loss, while the fast switching time makes it a suitable choice for high-end pulse-width modulated (PWM) control applications. Its low gate-source capacitance and low gate-drain capacitance make it an ideal choice for high-frequency switching and other high-frequency systems. Its tight lead spacing makes it suitable for tight-spaced circuit designs.

The SPP17N80C3XKSA1 MOSFET is designed to be used in applications such as power conversion and support for power factor correction, motor control, and high-efficiency driver circuits. It is often used as a means of controlling switching power supplies and as a switch in bridge rectifier circuits. It is frequently used in power management, motor control, and speed control of motors. It also has applications in high-end computing systems, LED lighting systems, and automotive power conversion control systems.

The SPP17N80C3XKSA1 MOSFET can be used in a variety of designs and applications. It is a switch with very low on-state resistance and low capacitance, which is ideal for fast-switching applications. It is perfect for high-current, low-voltage applications that require high-efficiency drivers. Additionally, its advanced packaging design ensures a lengthy useful life for reliable switching performance.

In summary, the SPP17N80C3XKSA1 is an advanced MOSFET with advanced process technology and packaging design. It is a depletion-mode MOSFET that is specifically designed for use in power management, motor control, and speed control applications. It is a single component that combines low on-resistance and low capacitance to offer fast switching. Its packaging design allows for tight lead spacing, making it ideal for tight-spaced circuit designs. Its high-voltage blocking capability and low gate charge make it suitable for applications where power dissipation and reliability are of primary concern. It is also perfectly suited for motor control, high-efficiency driver circuits, power conversion control, and power factor correction.

The specific data is subject to PDF, and the above content is for reference

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