STA431A

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	2 NPN, 2 PNP (H-Bridge)
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1V @ 200mA, 2A
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 1A, 4V
Power - Max:	4W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	10-SIP
Supplier Device Package:	10-SIP

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STA431A Application Field and Working PrincipleThe STA431A is a high-density monolithic array of NPN transistors which can provide output levels up to 150 mA, a common emitter frequency of up to 7 MHZ, and a wide current gain range. It is designed to provide higher density and power than its predecessors, while still providing improved heat dissipation. In this article, we will discuss the application field and working principle of the STA431A.ApplicationsThe STA431A is ideal for applications requiring reliability, high density, and high speed. It is a common choice for automotive, communication, industrial, and consumer electronics applications. This can be utilized for switching regulators, motor drivers, and various circuit control applications. It is also used in the design of low-cost logic circuits.The STA431A is also suitable for forming linear and gain limited feedback systems. The device works well for power amplifiers, power oscillators, and power drivers. This can also be used to make multiple drivers in linear amplifiers, as well as in analog amplifiers. Furthermore, it can be used in RF switching applications, such as in cellular phones and in image sensors.OperationThe STA431A is a monolithic, integrated circuit which contains an array of NPN transistors. The device utilizes 4, 6, or 8 transistors which are arranged in a multiple parallel configuration. Each transistor has its own emitter, base and collector regions, which are interconnected in a manner that allows the device to be driven at different currents and can be operated with either an AC or a DC voltage.When the power to the device is applied, the transistors are triggered and the associated current will flow from the emitter to the base and from the base to the collector regions. As the base current increases, a voltage drop occurs across the device, which allows the device to simulate an independent voltage source, allowing current from the collector to flow back to the base.ConclusionThe STA431A is a high-density array of NPN transistors which provides output levels up to 150 mA and a wide current gain range. It is a cost effective, reliable, and compact device which is widely used in many applications where reliability, high density, and high speed is desired. Its operation can be understood by understanding how the transistors are arranged and how the associated current flows through the device.

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