Allicdata Part #: | TK10A50D(STA4QM)-ND |
Manufacturer Part#: |
TK10A50D(STA4,Q,M) |
Price: | $ 1.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 10A TO-220SIS |
More Detail: | N-Channel 500V 10A (Ta) 45W (Tc) Through Hole TO-2... |
DataSheet: | TK10A50D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.10855 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 720 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK10A50D(STA4,Q,M) is a type of single field-effect transistor (FET) -- specifically, a metal–oxide–semiconductor FET -- that is used in a variety of industrial and consumer applications. This specific type of FET has a wide operating range, meaning it can handle both low-voltage (below 10VDC) and high-voltage (up to 500VDC) applications. Additionally, this type of FET exhibits low noise, fast switching times and low capacitance, making it well-suited for a range of applications.
At its core, the TK10A50D(STA4,Q,M) works similar to other FETs and follows the same principles of operation. The FET is composed of three layers: the source, the drain and the gate. The source and drain regions of a FET are connected to a voltage source and act as the power supply terminals, while the gate is the control terminal. When a voltage is applied to the gate, it produces an electric field which modulates the conductivity of the FET, allowing it to act as a variable resistor.
When used in an application, the FET is typically connected in a circuit with other components which determine its function. For example, in an inverting amplifier circuit, the TK10A50D(STA4,Q,M) is used as the voltage controlled resistor. In this circuit, the gate voltage is applied to the resistor to control the amount of current flowing through the circuit. With this circuit, a low gate voltage causes the FET to be less conductive, and a high gate voltage causes it to be more conductive. As such, the gate voltage controls the level of gain in the circuit, allowing the user to adjust the level of amplification to meet their needs.
The TK10A50D(STA4,Q,M) is used in a variety of applications, from sensor controls and motor controllers to audio amplifiers and medical devices. Because of its wide operating range, low noise operation and fast switching ability, it is well-suited for use in high-precision applications. Additionally, because of its low capacitance, it is popular for use in high-speed signal processing applications as well as for use in radiation-hardened circuits.
In summary, the TK10A50D(STA4,Q,M) is a type of single FET that is well-suited for a range of applications. Its wide operating range, low noise operation, fast switching times and low capacitance make it a popular choice in a variety of industrial and consumer applications. Its basic operation follows the same principles as other FETs, with a source, drain and gate which are used to control the conductivity of the device.
The specific data is subject to PDF, and the above content is for reference
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