2SK3564(STA4,Q,M) Allicdata Electronics
Allicdata Part #:

2SK3564(STA4QM)-ND

Manufacturer Part#:

2SK3564(STA4,Q,M)

Price: $ 1.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 900V 3A TO-220SIS
More Detail: N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-22...
DataSheet: 2SK3564(STA4,Q,M) datasheet2SK3564(STA4,Q,M) Datasheet/PDF
Quantity: 5
1 +: $ 1.31670
Stock 5Can Ship Immediately
$ 1.46
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: π-MOSIV
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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2SK3564 (STA4, Q, M) is a single-channel MOSFET (metal-oxide-semiconductor field-effect transistor) of the single package. It is used in a wide range of applications, including power conversion, inverter circuits, and power control. The 2SK3564 is a P-channel, normally-on MOSFET, meaning it conducts in the ON state and blocks in the OFF state; it is a depletion mode MOSFET, which means it requires negative gate voltage to turn off and will remain on until its drain-source voltage is 0V.

The 2SK3564 is specified to have a drain current (ID) of -4A, and can safely handle a high peak drain current (IDM) of -6A, with a breakdown voltage (BVDSS) of -60V. It also has a maximum on-state resistance (RDS) of 3.2mΩ. The gate-source voltage (VGS) range for the 2SK3564 is from -20V to 0V.

The 2SK3564 can be used as a switch for switching power between components or driving an inductive load. It can also be used in a switching regulator circuit for voltage regulation or as a linear regulator to control the output current of a power supply. In addition, it can be used to control a DC motor speed or be used to control a DC-DC converter.

The working principle of the 2SK3564 is based on the electrical characteristics of a MOSFET; when a voltage is applied to the gate of the MOSFET, it creates an electric field which modulates the concentration of electrons between the drain and source channels. Electrons are attracted by the gate voltage and away from the drain-source channel, leading to a decrease in current through the channel and turning the MOSFET off. The opposite occurs when the voltage is removed from the gate, and current flows freely though the drain-source channel and the MOSFET turns on.

The 2SK3564 is a versatile MOSFET which can be used in a wide range of applications. It is widely used for power conversion, inverter circuits, and power control in both AC and DC applications. It offers a high efficiency and low power dissipation and can handle a wide range of voltages and currents. Its smaller size makes it ideal for applications where space is limited, or where multiple MOSFETs need to be connected in parallel.

In conclusion, the 2SK3564 is a versatile single-channel MOSFET which offers high efficiency and low power dissipation in a wide range of applications. It is widely used for power conversion, inverter circuits, and power control both in AC and DC applications. For these reasons, it is essential for engineers and designers to have a thorough understanding of the device and its electrical characteristics.

The specific data is subject to PDF, and the above content is for reference

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