TK10A60D(STA4,Q,M) Allicdata Electronics
Allicdata Part #:

TK10A60DSTA4QM-ND

Manufacturer Part#:

TK10A60D(STA4,Q,M)

Price: $ 0.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 600V 10A TO220SIS
More Detail: N-Channel 600V 10A (Ta) 45W (Tc) Through Hole TO-2...
DataSheet: TK10A60D(STA4,Q,M) datasheetTK10A60D(STA4,Q,M) Datasheet/PDF
Quantity: 1000
2500 +: $ 0.68954
Stock 1000Can Ship Immediately
$ 0.76
Specifications
Series: π-MOSVII
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
FET Feature: --
Power Dissipation (Max): 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack
Description

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The TK10A60D is a type of transistor that belongs to the group oftransistors known as Field Effect Transistors (FETs). It is a Single MOSFET(S-MOSFET) and is also known by its designations of STA4, Q and M. Thesesingle MOSFET transistors can be used for a variety of applications whichare described below.

Applications of TK10A60D

  • High Power switching applications
  • High-voltage amplifier stages
  • Linear voltage regulator circuits
  • DC power-supply circuits
  • Audio power amplifiers
  • High-speed switching applications
  • High-power amplifier stages
  • High-frequency low-noise amplifiers
  • Low-noise coaxial cable amplifiers
  • Analog-to-digital and digital-to-analog converters

Working principle of TK10A60D

The TK10A60D is a type of Field Effect Transistor (FET) that uses a channel of electrons to transfer current between the two terminals of the two-opamp circuit (called the “source” and “drain”). ThisTransfer of electron current is accomplished by applying a voltage between the two terminals of the FET (called the “gate”). The gate voltage changes the resistance of the The FET, allowing or blocking the flow of current. The magnitude of current flow is then determined by the gate voltage and the resistance of the FET.

The TK10A60D has a low on-resistance and can be used for high-speed switching applications. As the drain and the source are on the same substrate, the drive characteristics of the FET are highly predictable and consistent. Additionally, the TK10A60D features a low capacitance, which makes it ideal for high-frequency switching applications.

The TK10A60D is also used in amplifiers for low-noise operation. Because of its low on-resistance, it can be used as a high-power amplifier switch, allowing much more power output than conventional FETs. Additionally, its low-noise characteristics make it ideal for low-noise amplifier stages.

The TK10A60D is also widely used in linear voltage regulator circuits. By adjusting the gate voltage, the FET can be used to regulate the voltage of a power supply, providing a steady and consistent voltage output. Additionally, the low-noise and high-power characteristics of the TK10A60D make it ideal for DC power supply circuits.

Conclusion

The TK10A60D is a type of single MOSFET transistor that is used for a variety of applications, including high-power switching, high-voltage amplifiers, linear voltage regulators, DC power supply circuits, audio power amplifiers, high-speed switching, high-power amplifiers and low-noise coaxial cable amplifiers. Its unique characteristics, such as low on-resistance, low capacitance and low-noise operation, make it an ideal choice for these applications.

The specific data is subject to PDF, and the above content is for reference

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