STFW12N120K5 Allicdata Electronics
Allicdata Part #:

497-17908-ND

Manufacturer Part#:

STFW12N120K5

Price: $ 7.94
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 1200V 12A TO-3PF
More Detail: N-Channel 1200V 12A (Tc) 63W (Tc) Through Hole ISO...
DataSheet: STFW12N120K5 datasheetSTFW12N120K5 Datasheet/PDF
Quantity: 1000
1 +: $ 7.94430
10 +: $ 7.70597
100 +: $ 7.54708
1000 +: $ 7.38820
10000 +: $ 7.14987
Stock 1000Can Ship Immediately
$ 7.94
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: ISOWATT218FX
Supplier Device Package: ISOWATT-218FX
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V
Series: MDmesh™ K5
Rds On (Max) @ Id, Vgs: 690 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STFW12N120K5 is a normally-off 100V single N-channel MOSFET with low on-state resistance, fast switching speed and high energy efficiency for use in power conversion applications. This MOSFET has a maximum current rating of 12A and is housed in TO-220 package. The STFW12N120K5 is suitable for use in a wide range of applications such as, switching power supplies, battery-powered equipment, AC/DC converters, DC/DC converters, automotive electronics and industrial machinery.

The STFW12N120K5 is a type of transistor, more specifically an n-channel MOSFET (metal-oxide-semiconductor field-effect transistor). A MOSFET consists of a source, drain and its gate. A source and drain are both externally connected to the power supply and the gate is connected to a voltage divider or to a source of a binary signal. When a voltage is applied to the gate, a conducting channel forms between the source and the drain allowing current flow. If the voltage is removed, then the conduction channel shuts down and the device is off.

N Channel MOSFETs are mainly used for switching applications. They are used in voltage-sensing and power control circuits needing fast switching capability, over-current protection, and motor control operations. N-channels have a lower on-resistance than P-channels and may be used to switch more current with the same component size. The STFW12N120K5 is capable of providing fast switching speed, low on-state resistance and high electrical efficiency.

The working principle of the STFW12N120K5 is basically the same as any other type of MOSFET. The gate is connected to the power supply via a voltage divider or to a source of binary signal. When a sufficient electric potential is applied to the gate, it attracts the electrons from the source to the drain creating an n-channel (tabulated as positively charged gate) between the source and drain, allowing current to pass through. When the voltage is removed, the n-channel is destroyed, turning off the switch and stopping the flow of current.

The STFW12N120K5 is suitable for a variety of applications due to its fast switching speed, low on-state resistance and high electrical efficiency. It is often used in switch-mode power supplies, motor control circuits and battery-powered equipment. The STFW12N120K5 is also used in AC/DC and DC/DC converters, automotive applications and industrial machines.

The STFW12N120K5 is an ideal choice for a broad range of power conversion applications due to its fast switching speed, low on-state resistance, and high efficiency. Its ability to switch large currents with minimal power loss makes it an attractive option for many types of power conversion solutions.

The specific data is subject to PDF, and the above content is for reference

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