
Allicdata Part #: | 497-15539-5-ND |
Manufacturer Part#: |
STFW45N65M5 |
Price: | $ 7.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 35A TO-3PF |
More Detail: | N-Channel 650V 35A (Tc) 57W (Tc) Through Hole ISOW... |
DataSheet: | ![]() |
Quantity: | 284 |
1 +: | $ 7.61040 |
10 +: | $ 7.38209 |
100 +: | $ 7.22988 |
1000 +: | $ 7.07767 |
10000 +: | $ 6.84936 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | ISOWATT218FX |
Supplier Device Package: | ISOWATT-218FX |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3470pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 78 mOhm @ 17.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STFW45N65M5 semiconductor device belongs to the category of transistors - FETs, MOSFETs - Single. On semiconductor devices books, it is classified as a Butlent Vinearsen FET (BVDSS). It is also known as a vertical MOSFET (VMOSFET).It is used in a variety of electronic fields, such as lighting control in automobiles, power supplies, switched-mode power supplies (SMPS), radio frequency amplifiers and RF component testing. Primarily, it is a power switching component.The STFW45N65M5 is a three-terminal device. It has an anode, a cathode and a gate. When a drain-source voltage is applied between the anode and the cathode, the FET runs in the linear zone. When the voltage is higher than the breakover point, the FET is said to be in the saturation region. In the linear zone the majority carriers are electrons and the depletion region acts as a resistive element between the anode and the cathode. The current flow between the anode and the cathode is proportional to the voltage applied between the anode and the cathode.In the saturation region, the channel between the anode and the cathode is pinched off. This means that the current flow between the anode and the cathode is now controlled proportionally by the gate voltage. When the gate voltage is sufficiently high, the drain current will be close to the current that flows into the gate electrode when the gate electrode is forward biased.The STFW45N65M5 can be operated in forward conduction and reverse conduction modes. In the forward conduction mode, the device is used as an electronic switch. When the gate voltage is Vg, the device is on and the drain current is continuous and regulated. In the reverse conduction mode, the device is operated in avalanche mode, where the internal electric field is high enough to cause a high current drain.Finally, the STFW45N65M5 is a reliable and cost-efficient semiconductor device, suitable for a variety of applications where power switching is needed. It can be used in automobiles, SMPS, RF amplifiers and component testing. With its versatile design, it is sure to be a semiconductor device of choice for many electronics engineers.
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