STFW20N65M5

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The STFW20N65M5 is a single-packaged power metal-oxide-silicon field-effect transistor (MOSFET) tube, produced by STMicroelectronics. The transistor is used in a variety of electronics applications, including power electronics systems and high-frequency switching. The STFW20N65M5 offers a high current gain and low drain-source voltage drop, making it a desirable option for power applications.

The STFW20N65M5 uses a vertical DMOS structure, which is useful in a wide range of applications. The structure allows the user to reduce the on-state conduction and switching losses, as well as to minimize noise-induced failure from power line transients. Additionally, the vertical structure is beneficial for improving heat dissipation, allowing for increased chip-level reliability.

The STFW20N65M5 is a N-channel MOSFET, with a drain-source breakdown voltage of 650 V, a gate threshold voltage of 3.5 V, an on-state voltage drop of 1.8 V, and a current capability of 40 A. This makes the transistor suitable for high-frequency switching and medium- to high-power applications up to 650 V, such as in motor control, switch-mode power supplies, charging systems, and general power electronics.

The STFW20N65M5 is characterized by its low gate charge and low gate-source capacitance. This allows the transistor to switch quickly, reducing switching losses and EMI. Additionally, the transistor has an ultra-low internal gate resistance, combined with an optimized threshold voltage shift and capacitance, leading to a high margin of safety in the application.

The STFW20N65M5 is designed to operate at temperatures of up to 175⁰C, making it suitable for automotive applications. The transistor has a fast switching speed in order to reduce switching losses, while its dV/dt immunity allows it to avoid noise-induced failures. The device also features a built-in temperature compensation feature, which ensures reliable operation in hot environments.

The STFW20N65M5 is an ideal choice for a wide range of applications in the power electronics industry. Its low gate-source capacitance and source-drain breakdown voltage make it suitable for high voltage applications up to 650 V. Additionally, its fast switching speed and dV/dt immunity make it suitable for high-frequency switching applications. Its high current gain, combined with its low temperature coefficient, make it an excellent choice for applications in harsh environments.

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