
Allicdata Part #: | 497-15006-5-ND |
Manufacturer Part#: |
STFW38N65M5 |
Price: | $ 4.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 30A TO-3PF |
More Detail: | N-Channel 650V 30A (Tc) 57W (Tc) Through Hole ISOW... |
DataSheet: | ![]() |
Quantity: | 300 |
1 +: | $ 4.98330 |
10 +: | $ 4.83380 |
100 +: | $ 4.73414 |
1000 +: | $ 4.63447 |
10000 +: | $ 4.48497 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | ISOWATT218FX |
Supplier Device Package: | ISOWATT-218FX |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 95 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STFW38N65M5 application field and working principle
Introduction
STFW38N65M5 is a member of the STF family of advanced Power MOSFET devices featuring a combination of low on-resistance, low gate charge, low output capacitance and high cell density. It is specifically designed for low-voltage automotive applications and to optimize system efficiency and reduce component count.
Application Field
STFW38N65M5 is a high-performance power MOSFET designed for automotive power switching applications. Its on-resistance and low gate charge are particularly suited for applications that require low conduction losses, such as load and motor control, battery charging and power management.
The device features an additional built-in short circuit protection function which is dual-channel enabled, enabling both high and low source MOSFETs to be protected. The device also features a reversed polarity detection function, which can protect the load when the Source and the Gate are not correctly connected. The device also provides ESD protection.
Thanks to its robust and reliable construction, STFW38N65M5 can also be used in harsh environments, such as automotive and industrial applications.
Working Principle of STFW38N65M5
The STFW38N65M5 device has three terminals – the drain, source, and gate. The gate is the control terminal of the MOSFET and it is the terminal which can be used to turn the MOSFET ON and OFF. When a positive voltage is applied to the gate terminal of the MOSFET, the resistance between the drain and the source decreases, allowing the flow of current between the drain and the source. When a negative voltage is applied to the gate, the MOSFET is turned off and the resistance between the drain and the source increases, blocking the flow of current between the drain and the source.
The device also features a built-in short circuit protection which acts as a current limiter, protecting the MOSFET from possible internal short circuits. The device also features ESD protection, which protects the device against electrostatic discharge. The device also features a reversed polarity detection, which can protect the load when the Source and the Gate are not correctly connected.
Conclusion
The STFW38N65M5 is a robust and reliable power MOSFET designed for automotive and industrial applications. Its combination of low on-resistance, low gate charge, low output capacitance and high cell density makes it ideal for applications demanding low conduction losses, such as load and motor control, battery charging and power management. The device also features additional built-in protection functions, including short circuit protection, ESD protection and reversed polarity detection.
The specific data is subject to PDF, and the above content is for reference
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