STFW24N60M2

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STFW24N60M2 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by STMicroelectronics. It is a power MOSFET designed for low- and medium-voltage applications. This particular device is a vertical double-diffused metal oxide semiconductor (DMOS) FET with maximum rating of 600 Volts and 2700 Amps.

The STFW24N60M2 is part of STMicroelectronics’ high-performance Power MOSFET family. These devices offer high current capabilities and are ideal for power applications in the telecommunications industry, automotive sector and consumer electronics. They feature tight gate-drain isolation creepage distances, low on-resistance characteristics, fast switching speeds and low gate charge which make them suitable for high-speed switching and high-frequency switching applications.

In terms of electrical parameters, the STFW24N60M2 has a drain-source voltage of 0 to 600V, gate-source voltage of -30 to +30V, drain-source current of up to 2700A and drain-source on-resistance of just 0.04 ohms at Tj max of 150 degrees centigrade. The gate is designed for fast switching and has gate-drain charge speci?cations of just 24 nC.

The STFW24N60M2 is the perfect choice for low- and medium-voltage, high power applications. It is especially suitable for power applications in the telecommunications industry, automotive sector and consumer electronics. It features low on-resistance characteristics, fast switching speeds and low gate charge which make them ideal for high-speed switching and high-frequency switching applications. The device also features tight gate-drain isolation creepage distances and can handle currents up to 2700 Amps.

The working principle of the STFW24N60M2 is the same as all other FETs. In this case, the drain and source terminal of the FET are placed in a P-type and N-type semiconductor material respectively. A low-voltage electrical signal is applied to the gate terminal to vary the resistance between the drain and source and thus control the passage of current through the device. In this way, the FET functions as an electronic switch or amplifier.

In conclusion, the STFW24N60M2 is an N-Channel power MOSFET which is designed for low- and medium-voltage applications. It has tight gate-drain isolation creepage distances and low on-resistance characteristics, ideal for power applications in the telecommunications industry, automotive sector and consumer electronics. It features fast switching speeds and low gate charge which make them suitable for high-speed switching and high-frequency switching applications. Understanding its application field and working principle can help users select the right device for their particular application.

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