STFW6N120K3

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The STFW6N120K3 transistor is the latest addition to STMicroelectronics\' SuperFET2™ family of low-voltage devices. This pioneering device is a state-of-the-art power MOSFET that combines powerful features with low on-state resistances for high efficiency and better system-level power management. The STFW6N120K3 is optimized for use in cost-sensitive applications such as lighting, motor control, and solar inverters.

The STFW6N120K3 has been designed to provide high performance with low cost. It features low on-state resistance and high simultaneous switching efficiency, allowing it to achieve higher-than-normal power savings while maintaining an overall low system cost. The device is ideal for applications with high channel-density requirements, such as automotive and industrial motor control, as well as applications requiring a wide range of input voltages, such as LED lighting.

The STFW6N120K3 is a Single N-Channel Power MOSFET, which is a high-speed, high-voltage, and low-on-state-resistance device. It has a 1200V drain-source breakdown voltage with an on-state resistance of 4.6m Ω at 25°C. The device has an advanced process technology providing unparalleled switching performance and a very low dynamic capacitance. It is also optimized for very-low losses and is able to dissipate up to 2.6W.

The STFW6N120K3 is an industrial-grade device and is suitable for a variety of applications, including motor control, inverters, AC to DC converters, lighting, and power supplies. The device is rated for a drain-source voltage of 600V, a gate-source voltage of ±20V, and a drain current of 6A. It is also capable of providing peak currents up to 12A and is able to operate at high temperatures up to 150°C.

The STFW6N120K3\'s working principle is based on the variations in the gate capacitance, which is controlled by the gate-source voltage. As the gate voltage is increased, the electrons in the gate are attracted towards its positive charge, increasing the capacitance and opening the drain-source channel. As the gate voltage is reduced, the gate capacitance is reduced, thereby reducing the drain-source conduction and the drain current. The gate-source voltage can also be programmed, allowing the device to be used in applications that require varying levels of drain current.

The STFW6N120K3 is a versatile and reliable device, designed to provide optimal performance in a wide range of applications. It is capable of switching at higher frequencies and is able to operate over a wide range of temperatures. The device also offers low on-state resistance and is able to dissipate up to 2.6W of power, making it an ideal choice for cost-competitive applications. In addition, the device can provide peak currents of up to 12A and is rated for a drain-source voltage of 600V, making it well-suited for high-voltage applications.

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