STFW3N150

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

High performance and cost effective applications are increasingly important in today\'s era of embedded digital devices. The STFW3N150 N- and P-channel metal oxide semiconductor field effect transistor (MOSFET) is a single package device that meets these requirements. It has been designed for use in both high-current, low-voltage power electronics applications and in the digital domain, providing designers with great flexibility. The STFW3N150 provides superior input threshold and output switching characteristics, and is rated for up to 50V of drain-source blocking voltage. The device can handle up to 1.5A of continuous DC current at 25°C and 1.3A at an ambient temperature of 125°C. It has an on-state resistance (RON) of 110mΩ and an off-state resistance of 1250mΩ.

The STFW3N150 has a wide range of applications in power electronics, including power supply circuits, current regulation, voltage regulation, high-speed switching, and small motor control. In the digital domain, it can be used as a high-speed logic switch in logic circuits, digital logic control systems, and analog-to-digital conversion systems. It can also be used in transistor-transistor logic (TTL) and other logic systems.

The working principle of the STFW3N150 is based on its MOSFET structure. This device is a voltage-controlled device, meaning that the behavior of the FET is determined by the voltage applied to its gate. When an appropriate voltage is applied to the gate of the STFW3N150, electrons are attracted to the gate, which brings the source and drain regions closer together. This reduces the resistance between the source and drain, allowing current to flow through the device. When the gate voltage is removed, the electrons are repelled and the resistance increases, preventing current flow.

The STFW3N150 is a high-performance MOSFET with excellent input characteristics, fast switching speed, and low switching losses. It is suitable for both high-voltage, high-current switch applications and low-voltage, low-power logic switches. It is easily integrated into existing designs and is an ideal choice for power applications and digital logic.

The specific data is subject to PDF, and the above content is for reference