Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	ISOWATT218FX
Supplier Device Package:	ISOWATT-218FX
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	79W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6420pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	143nC @ 10V
Series:	MDmesh™ V
Rds On (Max) @ Id, Vgs:	45 mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	58A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The STFW69N65M5 MOSFET

The STFW69N65M5 MOSFET is a high voltage, high current MOSFET n-channel, low-voltage power MOSFET. This transistor utilizes an optimized high voltage SuperMESH™ cell technology, combined with a high-speed, low-on-resistance, and secure connections. This MOSFET has a wide, continuous drain-source breakdown and temperature range and offers a variety of features and benefits.

Features of the STFW69N65M5 MOSFET

The STFW69N65M5 MOSFET offers a number of unique features that set it apart from other transistors, such as:

• High Voltage breakdown: 190 V
• Low gate charge Q g : 4.1 nC
• Low Rdson: 0.065 Ω
• High power dissipation: 150 W
• High pulsed drain current: 32 A
• High Operating temperature range: -55°C to 175°C
• Reliability: Reliability Level JEDEC class 1C

Application Field of the STFW69N65M5 MOSFET

The STFW69N65M5 MOSFET is designed for use in applications requiring high voltage, high current, and low power dissipation. It is especially suitable for use in switch mode power supplies, automotive electronics, lighting, linear and back-lighting, and various other applications.

The Working Principle of the STFW69N65M5 MOSFET

The STFW69N65M5 MOSFET utilizes a “normally-off” operating characteristic. This means that the MOSFET is normally in the off-state, with no current flowing through the device, until a threshold voltage (V GS ) is applied. When the voltage is applied to the gate of the MOSFET, electrons (holes) begin to accumulate at the interface between the gate and the channel. This creates an electric field that attracts the mobile charge carriers (electrons or holes) towards the gate. This process gradually depletes the carrier concentration in the vicinity of the gate, which results in an increasing electric field, leading to inversion of the channel and the corresponding formation of a conducting channel between source and drain. The current flow between source and drain is then proportional to the applied voltage.

Conclusion

The STFW69N65M5 MOSFET is an excellent choice for use in power electronics applications. Its features make it suitable for a wide range of applications, from automotive to industrial and from lighting to switch mode power supplies. Its high breakdown voltage and low gate charge make it an ideal choice for high-voltage, high-current applications. Its “normally-off” operating characteristic makes it safe and secure. With its high thermal resistance, high reliability, and wide operating temperature range, the STFW69N65M5 MOSFET is an excellent choice for a variety of electronics applications.

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