STFW4N150

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The STFW4N150 is a member of STMicroelectronics\' STM4F14xx family of N-channel enhancement-mode Field-Effect Transistors (FETs). This type of FET is a high-voltage and high-efficiency bipolar power MOSFET with low drain-source on-resistance (Rdd) values, low gate charge, and small surface area to reduce losses from conduction and switching. It is ideal for applications requiring both high-current and low-current needs, such as motor drivers, power converters, and automotive and industrial power supplies.

The STFW4N150 is a single-ended FET, with a press-fit technology contact design that reduces inductance and improves thermal contact. The FET has a drain-source blocking voltage (BVdss) of 150V, a maximum drain-source voltage (Vds) of 140V, and a maximum drain current (Id) of 5.0A. It is available in IGBT power module and stand-alone package options.

The STFW4N150 works using a basic field effect principle. It contains a source, a drain, and a gate; when a voltage between the source and drain is established, current begins to flow from the source to the drain. The voltage applied between the source and drain determines the amount of current that will flow. The amount of current that can flow is limited by the gate voltage that is applied, which controls the width of the channel. This effect is known as pinch-off. When the gate voltage increases, the capacity of the channel increases and more current is able to flow. Conversely, when the gate voltage decreases, the channel becomes narrower and less current is able to flow.

The STFW4N150 is an ideal solution for a variety of high-power automotive, industrial, and consumer applications. It is characterized by extremely low on-resistance, even when operating at high temperatures, and its high breakdown voltage rating makes it suitable for use in power supplies, motor controllers, and other power-control circuits.

In applications where the switching speed is critical, the STFW4N150\'s low on-resistance allows for high current densities, resulting in a greatly reduced switching time. Additionally, its low gate charge provides faster switching with less power dissipation, making it well-suited for applications requiring low-power dissipation and faster switching speeds. The STFW4N150\'s reliable performance and robust construction make it an ideal choice for a wide variety of applications.

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