STFW42N60M2-EP Allicdata Electronics
Allicdata Part #:

497-16309-5-ND

Manufacturer Part#:

STFW42N60M2-EP

Price: $ 7.15
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 34A
More Detail: N-Channel 600V 34A (Tc) 63W (Tc) Through Hole ISOW...
DataSheet: STFW42N60M2-EP datasheetSTFW42N60M2-EP Datasheet/PDF
Quantity: 273
1 +: $ 6.49530
30 +: $ 5.32455
120 +: $ 4.80506
510 +: $ 4.02585
Stock 273Can Ship Immediately
$ 7.15
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: ISOWATT218FX
Supplier Device Package: ISOWATT-218FX
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 87 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STFW42N60M2-EP is a powerful and high-performance N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It has an integrated planar structure and is rated at 42V, with a drain-source (D-S) on-resistance of 60mohms per channel. This makes the STFW42N60M2-EP ideal for a wide variety of applications including power amplifiers, motor drives and switch-mode power supplies.

The STFW42N60M2-EP is a high-voltage, low-noise, low-gate-charge MOSFET that is designed specifically for applications that require low-current drain. It has an extremely low RDS(on) and is capable of providing up to 60A continuous drain current, making it suitable for high-current switching and linear operations. The device also features a low-threshold gate drive, allowing the MOSFET to be used with a low-voltage control system. Additionally, it has an integrated ESD (electrostatic discharge) protection circuit, which provides extra protection against static electricity damage.

The STFW42N60M2-EP is also equipped with an inbuilt protection circuit, which is designed to limit short circuit current and prevent any damage to the device. This protection circuit is capable of limiting the current to safe levels and increases the chances of protecting the device from any potential damage during its operation. Additionally, the high-current drain capability also makes the device ideal for switching power supply applications, such as adjustable frequency drives, where the device can be used to improve the efficiency of the system.

This device\'s excellent performance and reliability make it a great choice for high-performance, low-current drain applications. The integrated structure of the STFW42N60M2-EP makes it ideal for integration into small form factor products, while its low gate-charge makes it perfect for high frequency switch mode power supplies. Its high-current drain capability also makes it suitable for motor drives and related applications, as well as power amplifiers and power conversion systems.

The STFW42N60M2-EP is an N-Channel MOSFET, which means it works like a switch that can be used to control electrical signals. It contains two terminals; a source and a drain. When a voltage is applied to the gate terminal, it creates an electric field that causes electrons to flow through the channel, thus allowing current to flow from the source to the drain. This is known as the MOSFET\'s working principle.

The STFW42N60M2-EP is an excellent choice for a wide range of applications that require low-current drain. Its integrated structure, high-current drain capability, low-noise operation and low gate-charge make it ideal for a variety of applications such as switch-mode power supplies, adjustable frequency drives, motor drives and power amplifiers. Additionally, its built-in protection circuit adds an extra layer of safety and reliability, making it a great choice for those looking for a reliable device.

The specific data is subject to PDF, and the above content is for reference

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