STP100N6F7 Allicdata Electronics
Allicdata Part #:

497-15888-5-ND

Manufacturer Part#:

STP100N6F7

Price: $ 1.45
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 100A F7 TO220AB
More Detail: N-Channel 60V 100A (Tc) 125W (Tc) Through Hole TO-...
DataSheet: STP100N6F7 datasheetSTP100N6F7 Datasheet/PDF
Quantity: 2166
1 +: $ 1.45000
10 +: $ 1.40650
100 +: $ 1.37750
1000 +: $ 1.34850
10000 +: $ 1.30500
Stock 2166Can Ship Immediately
$ 1.45
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: STripFET™ F7
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STP100N6F7 Application Field and Working Principle

The STP100N6F7 is a N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power switching applications, particularly in fast switching applications such as automotive and consumer electronics. The device features a low gate-source capacitance, enabling faster switching and higher efficiency compared to traditional MOSFETs.

Application Fields

The STP100N6F7 is often used as a power switch in automotive applications such as motor controllers, solenoid drivers, and ignition systems. It is also used in consumer electronics, particularly in switch-mode power supplies. The device is suitable for a wide range of power levels, from just a few Watts to hundreds of Watts. This makes it an ideal solution for a variety of applications.

Working Principle

At its core, the STP100N6F7 is a N-Channel Enhancement-mode MOSFET. This means that the current between its source and drain is controlled by its gate voltage. When the gate voltage is low, the channel between its source and drain is open, allowing current to flow. When the gate voltage is increased, the channel is closed, blocking any current flow. This basic principle is used to control power in a variety of applications.

The STP100N6F7 uses an insulated gate to control the current flow. The insulation makes sure that the gate voltage is kept isolated from the rest of the device, allowing for higher switching speeds and better efficiency. Additionally, the gate is designed to minimize the gate-source capacitance, allowing for faster switching.

In applications, the STP100N6F7 can be used as a power switch. The gate voltage can be controlled using an external circuit, allowing for on/off switching of the device. The low capacitance and high efficiency of the device make it a great choice for power switching applications, where speed and efficiency are critical factors.

Conclusion

The STP100N6F7 is an N-Channel Enhancement-mode MOSFET designed for power switching applications. It is often used in automotive and consumer electronics applications, where its low gate-source capacitance, high efficiency, and fast switching speeds make it an ideal solution. In applications, the device can be used to control the flow of current with its gate voltage, making it a great choice for power switching applications.

The specific data is subject to PDF, and the above content is for reference

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