| Allicdata Part #: | 497-5973-5-ND |
| Manufacturer Part#: |
STP11NK50ZFP |
| Price: | $ 1.77 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 500V 10A TO-220FP |
| More Detail: | N-Channel 500V 10A (Tc) 30W (Tc) Through Hole TO-2... |
| DataSheet: | STP11NK50ZFP Datasheet/PDF |
| Quantity: | 45 |
| 1 +: | $ 1.77000 |
| 10 +: | $ 1.71690 |
| 100 +: | $ 1.68150 |
| 1000 +: | $ 1.64610 |
| 10000 +: | $ 1.59300 |
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1390pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
| Series: | SuperMESH™ |
| Rds On (Max) @ Id, Vgs: | 520 mOhm @ 4.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STP11NK50ZFP is a 500 V n-channel power MOSFET that is made by STMicroelectronics. They are designed to provide low on-resistance and low gate charge, reducing power dissipation and enabling high switching speeds for the circuit. This makes the STP11NK50ZFP well suited for a wide range of applications.The STP11NK50ZFP utilizes the latest technology in MOSFET design. It is manufactured using a polysilicon gate technology and advanced plasma processing techniques. It also features a high-density cell design that helps to reduce the on-resistance. This allows the device to handle up to 500 V of continuous Drain-to-Source voltage. The dielectric breakdown voltage is rated at 11 V.The device is available in a TO-220 package, making it appropriate for use in a wide range of electronic applications. The on-resistances are relatively low, making it suitable for high-frequency switching applications. It also has low gate charge, which reduces power dissipation and enables high switching speeds.The basic working principle of the STP11NK50ZFP is that when the gate voltage is larger than the threshold voltage (Vth), the MOSFET is turned on and the Drain current can flow. This process is known as source-follower action and is widely used in switching applications.The STP11NK50ZFP is well suited for use in a variety of high-power switching applications. It can be used to switch large currents, making it ideal for use in power supply designs. It can also be used for motor control applications, such as for controlling the speed or direction of motor shaft rotation. The device is also well suited for high-reliability applications, such as in automotive and aerospace systems.The STP11NK50ZFP is also a good choice for low-noise applications, due to its low gate charge and high-switching speed. It can also be used in audio amplifier applications, as it has low-distortion characteristics. It can also be used in consumer applications, such as in portable audio equipment.The STP11NK50ZFP is a versatile power MOSFET that is well suited for a wide range of applications. It has low on-resistance and low gate charge, making it well suited for high-power switching applications. It is also suitable for low-noise and high-reliability applications. The TO-220 package makes it easy to mount and leads to a small form factor. These features make the STP11NK50ZFP an ideal choice for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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STP11NK50ZFP Datasheet/PDF