STP185N55F3 Allicdata Electronics
Allicdata Part #:

497-7513-5-ND

Manufacturer Part#:

STP185N55F3

Price: $ 5.15
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 55V 120A TO-220
More Detail: N-Channel 55V 120A (Tc) 330W (Tc) Through Hole TO-...
DataSheet: STP185N55F3 datasheetSTP185N55F3 Datasheet/PDF
Quantity: 941
1 +: $ 4.68720
50 +: $ 3.76564
100 +: $ 3.43085
500 +: $ 2.77817
Stock 941Can Ship Immediately
$ 5.15
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 330W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Transistors - FETs, MOSFETs - Single

The STP185N55F3 is a type of MOS field effect transistor (MOSFET) designed for high power and high current switching applications. It is an advanced MOSFET which combines excellent on-resistance with a very low gate drive voltage. The STP185N55F3 has an enhanced version of the TO-220 package, called the PowerFLAT5+2, which allows the device to use more powerful packages for higher currents.

In addition to its impressive high current capabilities, the STP185N55F3 has a low gate drive voltage and low on-resistance which makes it ideal for applications which need to switch high currents but with a limited driving power. The low on-resistance and gate drive characteristics of this device make it ideal for switching applications such as motor drive, relay drive, power converters and power supplies.

STP185N55F3 Application Field and Working Principle

The STP185N55F3 can be used in a wide range of applications. It is suitable for use in motor drives, relay drives, power converters, power supplies, and other switched mode power applications. Furthermore, it can also be used in audio amplifiers and other consumer electronics that require high power switching.

In order to understand the operating principle of the STP185N55F3, it is important to first understand the basics of the MOSFET. MOSFETs are four-terminal devices that are used to control the flow of current between two terminals by applying a voltage to the gate terminal. The three terminals of the device are the gate, the source and the drain. When there is no gate voltage, the MOSFET is in its cut-off state and no current flows between the source and the drain. When a gate voltage is applied, the MOSFET is driven into its saturation state and current can flow between the source and the drain.

The STP185N55F3 is an improved version of the standard PowerFLAT™ MOSFET package. It is designed to be used in high current and high power applications. The device has a very low RDS(on) (on-resistance) and a low gate drive voltage. The low on-resistance and gate drive voltage makes the STP185N55F3 ideal for switching applications where high currents need to be switched but with a limited power driving capability.

In terms of the application field, the STP185N55F3 can be used in numerous applications such as motor drives, power supplies, relays, audio amplifiers, and other consumer electronics. In addition, it can also be used in power converter designs in order to achieve higher levels of efficiency and reliability.

In conclusion, the STP185N55F3 is an ideal MOSFET for applications that require high power and high current switching. It has a low on-resistance and a low gate drive voltage and can be used in applications such as motor drives, power supplies, and audio amplifiers. In terms of application fields, it can also be used in power converters to achieve higher levels of efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference

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