Allicdata Part #: | 497-15039-5-ND |
Manufacturer Part#: |
STP11N65M2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 7A TO-220AB |
More Detail: | N-Channel 650V 7A (Tc) 85W (Tc) Through Hole TO-22... |
DataSheet: | STP11N65M2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 670 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP11N65M2 is a type of MOSFET, or metal-oxide field-effect transistor, one of the most widely used semiconductor devices. It is used in a wide range of digital and analog applications, such as switching, amplifier stages, power management, low power logic circuits and audio amplifiers. It has a variety of features that make it ideal for use in a variety of applications. Here, we will discuss the application field, the working principle of the device, and some of its features.
Application Field of STP11N65M2
The STP11N65M2 is an Ideal for motor control, general-purpose power switching applications, power supplies, and DC/DC converters. It is a cost-effective solution for several automotive applications, such as engine control, body electronic systems, lighting systems, and power window motors. It is also suitable for systems requiring high power handling, such as motor drives.
Working Principle of STP11N65M2
The way the STP11N65M2 works is that there are three terminals, the source, gate, and drain. The source is the input and the gate and drain are two different outputs, usually connected to other electronics. In the off state, the gate to source voltage (by which is usually referred to as Vgs) is 0 volts, but when a voltage is applied to it, current starts flowing between it and the source. This current is controlled by the dynamic resistance between the source and the drain and is known as the RF. When the voltage applied to the gate reaches a certain threshold, the channel opens up and current is allowed to flow from the source to the drain freely. The current flowing from the source to the drain is known as the Drain current or Id.
Features of STP11N65M2
The main features of the STP11N65M2 include the following:
- Low On-state Resistance (RDS(on))
- High speed switching
- Excellent commutation
- High avalanche energy capability
- Integrated gate-drive with diode
- Lead-free, RoHS compliant
The low RDS(on) of the STP11N65M2 makes it ideal for high current, high speed applications, which is especially helpful for motor control. The high avalanche energy capability means that it is well suited for high current applications since it is able to handle high voltage transients that occur in such applications. The integrated gate-drive with diode reduces the complexity of the circuit by eliminating the need for a separate booster transformer or gate driver IC.
Conclusion
The STP11N65M2 is a single MOSFET designed for a wide range of applications in both digital and analog circuits. It is capable of high speed switching and excellent commutation, while its low RDS(on) and integrated gate-drive with diode make it ideal for high current, high speed applications. It is also lead-free and RoHS compliant, making it suitable for a variety of automotive applications.
The specific data is subject to PDF, and the above content is for reference
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