STP180N10F3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	315W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6665pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	114.6nC @ 10V
Series:	STripFET™ III
Rds On (Max) @ Id, Vgs:	5.1 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STP180N10F3 is a non-logic N-channel MOSFET of a special structure, which is suitable for low- and mid-voltage switching applications. It is widely used in power converters, lighting control systems and other industrial applications. In this article, the application field and working principle of STP180N10F3 are discussed.
The STP180N10F3 is a typically small, surface mount package with a drain current of 180A. It offers a wide range of operating voltages from 8V to 100V and a low on-resistance of only 10mΩ under various conditions. This MOSFET has a high maximum drain source voltage of 250V, which is twice the typical operating voltage used in most power applications. The small size and on-resistance make it ideal for use in high efficiency power converters.
The STP180N10F3 is often used in various applications such as motor control, inverter, voltage regulator, bridge rectifier, battery charger and switching power supply. It can also be used in amplifier circuits and can be used to switch high current. The MOSFET has an avalanche-rated drain-source diode to provide protection against transients that might occur during operation.
The working principle of the STP180N10F3 is relatively simple and efficient. The gate of the MOSFET is connected to the source, and a voltage applied to the drain results in current flow through the channel. The voltage applied to the gate is controlled and can either increase or decrease the current flow through the channel. The drain source voltage (Vds) is limited to ensure that too high a voltage does not damage the device.
In summary, the STP180N10F3 is a versatile non-logic N-channel MOSFET designed for low- and mid-voltage switching applications. It is suitable for industrial applications such as power converters, lighting control systems and other power applications. It has a wide operating voltage range and a low on-resistance. The working principle of this MOSFET is based on the application of a voltage to the gate and the resulting current flow through the channel.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description