
Allicdata Part #: | 497-10770-5-ND |
Manufacturer Part#: |
STP10NM50N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 7A TO220 |
More Detail: | N-Channel 500V 7A (Tc) 70W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 630 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
STP10NM50N is a type of N-channel enhancement-mode vertical double-diffused metal-oxide-semiconductor field-effect transistor (HEXFET), developed by STMicroelectronics. It is manufactured using advanced trench technology, featuring remarkable dv/dt capability, where it is more resistant to destruction from fast transients than other similar FETs.
This device, although of N-channel, can still operate with the same VDS as bipolar transistors, eliminating the need for an insulated gate driver circuit. It also helps to protect your circuits from noise, as this feature allows it to be switched off quickly.
The STP10NM50N features a maximum drain source voltage of 50 V, a maximum drain current of 55 A, and a maximum power dissipation of 750 W, so it’s ideal for high-power applications. It also features a low on-state resistance of 8.0 mOhm, enabling it to provide excellent thermal stability for optimal efficiency.
The excellent thermal performance of the STP10NM50N makes it suitable for a wide range of applications, including motor control, LED lighting, power conditioning, and power supplies.
The STP10NM50N works on the principle of voltage biasing, wherein a negative voltage bias is applied to the gate of the FET to create an inversion layer between the n-type semiconductor and the p-type semiconductor. This bias voltage creates an electric field that acts as an insulating layer between the two semiconductors, allowing current to flow.
The device is capable of controlling the voltage and current flow in the circuit, and can be used as a switch or amplifier, depending on the requirements. It can be used to control large currents, and is also often used in motor control applications where it provides high speed switching and current-limiting features.
In conclusion, the STP10NM50N is an ideal choice for applications requiring high power, high current, and low on-state resistance. It is also suitable for a wide range of applications, including motor control, LED lighting, power conditioning, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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