Allicdata Part #: | 497-16500-5-ND |
Manufacturer Part#: |
STP10LN80K5 |
Price: | $ 2.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 8A TO-220 |
More Detail: | N-Channel 800V 8A (Tc) 110W (Tc) Through Hole TO-2... |
DataSheet: | STP10LN80K5 Datasheet/PDF |
Quantity: | 941 |
1 +: | $ 1.86480 |
50 +: | $ 1.50331 |
100 +: | $ 1.35299 |
500 +: | $ 1.05234 |
1000 +: | $ 0.87194 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 427pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 630 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STP10LN80K5 is a member of the STripFET™ Power MOSFET family which offers improved R DS(ON) and lower gate charge, resulting in higher efficiency and improved power density. It is capable of high-efficiency operation up to 10 A and 500 V.
Understanding the application field and working principle of the STP10LN80K5 is essential for proper operation and maximum efficiency.
Application Field of STP10LN80K5
The STP10LN80K5 is best suited for applications such as
- Switching mode power supplies
- DC-DC converters
- DC motor drives
The STP10LN80K5 is also well-suited for high-frequency applications, including
- Switch mode lighting ballasts
- Power management systems
- Charge regulation in power management systems
- High-speed switching applications
The STP10LN80K5 is well-suited for consumer and industrial use due to its wide operating temperature range, high-frequency operation, and low power consumption.
Working Principle of STP10LN80K5
The STP10LN80K5 is a type of insulated-gate bipolar transistor (IGBT) that uses two separate elements to control the current flow. It has a gate-drain junction where its switching characteristics are determined. It also has a gate-source junction which is used to control the voltage applied to the gate-drain junction.
The IGBT allows for high-efficiency operation due to its low power consumption. Its low-voltage operation also increases efficiency. The low gate-source voltage threshold voltage also allows it to be used in low-voltage applications.
The STP10LN80K5 is capable of high-frequency switching due to its low power consumption and the reduced gate charge. This allows for high-speed switching for applications such as switch mode lighting ballasts and power management systems.
The STP10LN80K5 is capable of high-frequency operation due to its fast switching speeds. Its low gate charge allows for fast switching and the low power consumption allows it to be used in low-voltage applications. Its low capacitance also allows it to be used in high-frequency applications.
The STP10LN80K5 is a reliable transistor and can handle high current and power. Its low power consumption and high-frequency operation make it an ideal choice for high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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