| Allicdata Part #: | 497-5892-5-ND |
| Manufacturer Part#: |
STP10NK60ZFP |
| Price: | $ 2.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 10A TO220FP |
| More Detail: | N-Channel 600V 10A (Tc) 35W (Tc) Through Hole TO-2... |
| DataSheet: |  STP10NK60ZFP Datasheet/PDF |
| Quantity: | 1426 |
| 1 +: | $ 2.34000 |
| 10 +: | $ 2.26980 |
| 100 +: | $ 2.22300 |
| 1000 +: | $ 2.17620 |
| 10000 +: | $ 2.10600 |
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 35W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1370pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | SuperMESH™ |
| Rds On (Max) @ Id, Vgs: | 750 mOhm @ 4.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The STP10NK60ZFP FET is a high-power and ultra-low-voltage MOSFET designed for automotive applications. It is designed specifically to work in harsh automotive environments, providing a high performance alternative to a traditional low voltage transistor. It is designed to provide a wide range of operating temperature ranges and power levels, allowing for the use of more complex and efficient driving technologies in newer and more powerful automotive systems. This article will discuss the application field and working principle of the STP 10NK60ZFP FET.
Application Field
The STP 10NK60ZFP MOSFET is designed primarily for use in passenger vehicles and light trucks, as well as industrial equipment. Specifically, it is designed to be used in applications such as motor control, power conditioning, and power management, as well as general switching and amplification. Its small size and low power consumption make it particularly suitable for use in compact, energy-efficient automotive systems, which often require the use of a FET that can reliably perform over a wide range of temperatures.Working Principle
The STP 10NK60ZFP is a metal-oxide-semiconductor field-effect transistor (MOSFET), in which the gate controls the flow of current between the source and the drain. It is constructed from a single piece of silicon, which is electrically insulated from the rest of the device by an insulating layer known as a gate dielectric. In addition, the gate is also insulated from the source and drain, so that electrical current can not flow between them.When the gate is left uncharged, no current can flow between the source and the drain. However, when an electrical voltage is applied to the gate, it creates an electric field that attracts electrons from the surrounding silicon, which then flow from the source to the drain, allowing current to flow. Depending on the magnitude of the voltage applied, the amount of current that flows can be controlled.Due to its low power consumption, the STP 10NK60ZFP is particularly suitable for use in battery-powered applications, as it will not draw as much current as more traditional FETs. Additionally, its high operating temperature range makes it suitable for use in automotive applications, where temperatures can often exceed standard operating ranges.Conclusion
The STP 10NK60ZFP is a high-power and ultra-low-voltage MOSFET designed for various automotive applications. It is designed to offer superior performance over traditional FETs, with its low-power consumption and high operating temperature range being particularly suited to energy-efficient, automotive systems. The working principle of the FET is based on the gate controlling the flow of current between the source and the drain, with the amount of current that flows being dependent on the applied voltage to the gate.The specific data is subject to PDF, and the above content is for reference
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