STP110N7F6 Allicdata Electronics
Allicdata Part #:

497-17934-ND

Manufacturer Part#:

STP110N7F6

Price: $ 0.79
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CHANNEL 68V 110A TO220
More Detail: N-Channel 68V 110A (Tc) 176W (Tc) Through Hole TO-...
DataSheet: STP110N7F6 datasheetSTP110N7F6 Datasheet/PDF
Quantity: 1000
1 +: $ 0.79000
10 +: $ 0.76630
100 +: $ 0.75050
1000 +: $ 0.73470
10000 +: $ 0.71100
Stock 1000Can Ship Immediately
$ 0.79
Specifications
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 176W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
Vgs (Max): ±20V
Series: STripFET™ F6
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 55A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 68V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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STP110N7F6 is one of a series of Field Effect Transistors (FETs), specifically an N-channel enhancement mode power MOSFET (metal–oxide–semiconductor field-effect transistor). This FET is designed to minimize the on-state resistance with 100% avalanche rated operation, making it suitable for use in applications such as synchronous rectification in AC-DC power supply converters, motor drive systems, and switching power stages. Additionally, it features low gate charge, low RDS(on) power dissipation, and a taken TO-220 package, making it ideal for use in electronic systems that require both high efficiency and high reliability.

FETs are a type of transistor that utilizes a “gate” to control the flow of electrons between terminals, which are connected to a body or substrate of the transistor. The STP110N7F6 is an N-channel FET, meaning the transistor will remain off until voltage is applied to the gate electrode. This creates a conductive channel between the two source and drain terminals, allowing current to flow. When the gate voltage is removed, the conductive channel is disrupted, and the transistor turns off.

When compared to bipolar junction transistors (BJTs), FETs are generally more reliable and require less current to operate. Additionally, FETs typically have higher operating efficiencies due to the very low gate resistance and the low input capacitance.

The STP110N7F6 is designed to minimize the on-state resistance, making it well suited for use in synchronous rectification in AC-DC power supply converters. It is also ideal for motor drive systems and other switching power stages, as it has a low gate charge and a low RDS(on) power dissipation. It also has an integrated Schottky diode, which reduces power dissipation and prevents the transistor from being damaged during turn-off. Additionally, it has a taken TO-220 package, which is designed to dissipate heat more quickly.

Overall, the STP110N7F6 is an ideal choice for applications that require both high efficiency and high reliability. Its low RDS(on) power dissipation and low gate charge make it well suited for synchronous rectification in AC-DC power converter, motor drive systems, and other switching power stages. It also features an integrated Schottky diode for additional protection and a TO-220 package for efficient heat dissipation.

The specific data is subject to PDF, and the above content is for reference

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