STP12PF06 Allicdata Electronics
Allicdata Part #:

497-2721-5-ND

Manufacturer Part#:

STP12PF06

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET P-CH 60V 12A TO-220
More Detail: P-Channel 60V 12A (Tc) 60W (Tc) Through Hole TO-22...
DataSheet: STP12PF06 datasheetSTP12PF06 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are used in many different applications and have a wide range of uses. The STP12PF06 is a single-channel, logic level, N-channel MOSFET which can be used in a variety of applications.

The most important feature of the STP12PF06 is that it is a logic level MOSFET. This means that it can be operated at a lower gate voltage than typical MOSFET devices. This makes it easier to use in digital circuits where the gate voltage might not be available. It can also be used in analog circuits where a lower gate voltage is beneficial in avoiding saturation and providing lower switching losses. The gate threshold voltage (VGS) of the STP12PF06 is only 3 volts, so it can be driven by standard CMOS logic levels.

The STP12PF06 operates in the enhancement mode, which means that it is “off” when the gate voltage (VGS) is below its threshold voltage and “on” when it is above it. The device is typically used as a switch, with the gate voltage controlling the conduction between the source and drain. In this mode of operation, the STP12PF06 has a low drain-source on-resistance of just 6.6 mOhm at a gate voltage of 4.5 V, allowing it to handle up to 14 A of current at 25°C.

The STP12PF06 can also be used as an amplifier if it is connected in conjunction with a resistor. When a voltage is applied to the gate, it will create a current through the resistor, which is then amplified by the MOSFET and passed through to the load. This makes it ideal for use in analog switching applications such as audio signal processing.

The STP12PF06 is typically used in applications requiring low on-resistance and high switching speed. It is particularly popular for motor control applications, because its low on-resistance reduces power consumption and heat dissipation. Additionally, its low gate voltage threshold means that it can be efficiently driven by low power logic with wide compatibility.

The STP12PF06 can also be used in precision analog switching applications, where its low on-resistance and low gate voltage threshold provide superior performance. It is also popular for use in digital to analog converters, where it is used to control the charge transfer between the digital circuit and the analog load.

In summary, the STP12PF06 is a single-channel N-channel MOSFET which can be used in a wide range of applications. It operates in the enhancement mode, meaning it can be operated at low gate voltages and is capable of providing low resistance and fast switching speeds. It is most commonly used in applications requiring low on-resistance and high switching speed, such as motor control and precision analog switching.

The specific data is subject to PDF, and the above content is for reference

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