STP130N8F7 Allicdata Electronics
Allicdata Part #:

STP130N8F7-ND

Manufacturer Part#:

STP130N8F7

Price: $ 0.74
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CHANNEL 80V 80A TO220
More Detail: N-Channel 80V 80A (Tc) 205W (Tc) Through Hole TO-2...
DataSheet: STP130N8F7 datasheetSTP130N8F7 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.67024
Stock 1000Can Ship Immediately
$ 0.74
Specifications
Series: STripFET™ F7
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): 205W (Tc)
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Description

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STP130N8F7 application field and working principle

Introduction:

STP130N8F7 is a field effect transistor (FET) manufactured by STMicroelectronics and is a power MOSFET. This device has an insulated gate structure, with a drain-source breakdown voltage of 130volts and a Drain-source peak current rating of 8A. It is specifically designed for automotive applications, where high performances and reliable operation are a must.

Application field:

Due to its high current rating and low gate threshold voltage, the STP130N8F7 is suitable for automotive applications, example powertrain systems, engine, transmission and power management. This device can also be used in other applications, such as motor control, lighting, DC power systems, audio amplifiers and audio power stage.

Working Principle:

The STP130N8F7 is a MOSFET. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, which is a current-controlled three terminal device. It is composed of three layers: a gate electrode, a semiconductor body, and a source and a drain. The gate electrode acts as a switch which controls the current flow between the source and the drain by varying the voltage applied to the gate. The STP130N8F7 is an N-channel device. N-channel MOSFET works by applying gate voltage lower than the source, this will open the channel and make a conducting path between the source and the drain, while keeping the resistance between them low. While when the voltage applied to the gate is higher than the source voltage, the channel will be off and no current will flow between the source and the drain. The STP130N8F7 is designed to have an on-state resistance of 0.032Ω at 5.0V for better power dissipation and heat removal.

Conclusion:

The STP130N8F7 is a power MOSFET which is specifically designed for automotive application, where high reliability and performances are a must. It has a low on-state resistance and a high current rating, making it suitable for motor control, audio power stages and DC power systems. The electrical characteristics of this device make it suitable for both on-load and off-load operation.

The specific data is subject to PDF, and the above content is for reference

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