
Allicdata Part #: | 497-5894-5-ND |
Manufacturer Part#: |
STP140NF75 |
Price: | $ 2.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 75V 120A TO-220 |
More Detail: | N-Channel 75V 120A (Tc) 310W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 9780 |
1 +: | $ 2.35000 |
10 +: | $ 2.27950 |
100 +: | $ 2.23250 |
1000 +: | $ 2.18550 |
10000 +: | $ 2.11500 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 310W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 218nC @ 10V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 70A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP140NF75 is an N-channel Enhancement Mode power field effect transistor (FET) with an ultra-low on-resistance RDS (ON). These transistors are based on a new high-voltage vertical channel process and have been optimized for use in high frequency switching applications. The transistor\'s high current (Id) capability and its small size as compared to many other FETs make it ideal for power switching applications.
The STP140NF75 is mainly used in power switching applications in which high current needs to be switched. It can be used in a wide range of applications such as DC/DC converters, audio amplifiers, motor drives and solenoid drivers. Additionally, it can also be used for other applications such as voltage regulators, linear power supplies, and switching power supplies.
The working principle of the STP140NF75 is based on the construction of an N-channel FET. When the gate voltage is applied, a voltage is established across the gate/source terminals. This results in gate current, which causes the electrons to migrate from the source region to the channel region of the transistor. This results in a depletion region composed of positively charged ions, creating a barrier between the source and the drain. When the drain-source voltage (VDS) is applied, electrons are driven from the source to the drain, leading to conduction in the channel. The current that passes through the depletion region capacitance reduces the drain/source voltage, resulting in a lower on-resistance. This is referred to as the transconductance of the transistor.
In addition to its low on-resistance and high current capability, the STP140NF75 also features a low turn-off time and low capacitance. This is due to the low gate charge of the transistor, allowing it to be switched off quickly and reducing the amount of charge stored on its terminals. The low capacitance of the STP140NF75 is also beneficial since it reduces the power losses associated with switching high voltage and high current. The STP140NF75 is also designed to be extremely sensitive to temperature changes and is able to handle high temperatures and currents without damaging the device.
Overall, the STP140NF75 is an excellent choice for a variety of power switching applications. Its low on-resistance and high current capability make it ideal for DC/DC converters and high current switching applications. Its low turn-off time and low capacitance also make it well-suited for high power applications. Finally, its temperature sensitivity and robust construction make it reliable for high temperature and current applications.
The specific data is subject to PDF, and the above content is for reference
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