STP14NK60Z Allicdata Electronics
Allicdata Part #:

STP14NK60Z-ND

Manufacturer Part#:

STP14NK60Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 13.5A TO-220
More Detail: N-Channel 600V 13.5A (Tc) 160W (Tc) Through Hole T...
DataSheet: STP14NK60Z datasheetSTP14NK60Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STP14NK60Z Application Field and Working Principle

The STP14NK60Z is a N-channel vertical double diffused metal-oxide-semiconductor field-effect transistor (MOSFET). It is designed to handle up to 600 V and typically used in applications like switch-mode power supplies, lighting systems, motor controls, and AC and DC motor drivers. While designed for high voltage applications, the STP14NK60Z is still able to maintain low on-resistance levels and long-term reliability.

The STP14NK60Z is one of the most commonly used power MOSFETs, due to its popularity and availability. Its special feature is its higher drain-source breakdown voltage, which makes it suitable for high-power systems. It is also made with an n-channel design, making it suitable for handling high-voltage applications with large currents.

The STP14NK60Z is a vertical double-diffused metal-oxide-semiconductor field-effect transistor (DMOSFET). Its construction is based on a substrate of silicon, which is formed using two diffusion processes – the source and drain diffusion. The source and drain are formed from doping the substrate with impurities. The base material is then covered with a metal oxide layer, which acts as a gate insulator.

DMOSFETs are well-suited for power applications, because of the benefits of their design. They offer higher current and voltage capacities, as well as a low on-state resistance. DMOSFETs are key components in efficient switching and linear applications.

The STP14NK60Z is designed to handle large currents, with a very low on-resistance value of 0.065 ohm. It is also capable of operations up to 600 V. The STP14NK60Z is capable of high switching capability and high EMI suppression, making it ideal for power management applications.

Another unique feature of the STP14NK60Z is its avalanche energy rating of 6mJ. This rating is higher than other MOSFETs and allows for safer operations during transient voltage overloads. It also means that the transistor can safely handle higher pulse voltages and currents in applications that require faster switching times.

The STP14NK60Z is typically used in applications with AC and DC motor control, lighting systems, switch-mode power supplies, and AC and DC motor drivers. It is highly reliable and popular due to its low on-resistance, high breakdown voltage, and excellent switching ability.

In summary, the STP14NK60Z is a popular N-channel vertical DMOSFET, ideal for applications that require high-voltage and large current carrying capabilities. It is characterized by low on-resistance, high breakdown voltage, and high EMI suppression. It is well-suited for applications such as switch-mode power supplies, lighting systems, motor controls, and AC and DC motor drivers.

The specific data is subject to PDF, and the above content is for reference

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