STP15NK50Z

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The STP15NK50Z transistor is part of the STP15 range of bipolar surface mount power transistors produced by STMicroelectronics. This device is a high voltage, high current, N-channel MOSFET with ESD protection.

The STP15NK50Z has a source-drain breakdown vertical DMOS structure. It has a VDSS operation of 500 V, an ID of 15 A, a Pd of 165 W, and a typical threshold voltage VGS(th) of 2.2V. It has a drain-source breakdown voltage of 500 V and a gate-source breakdown voltage of +/-20 V. It is rated for a continuous drain current of 15 A and a pulsed drain current of 35 A.

The STP15NK50Z features an ESD protection function, ensuring reliable operation when exposed to an electric stress caused by an electrostatic discharge. This protection is implemented via a unique integration of an ESD element on the die, which provides superior protection levels when compared with MOSFETs which use external ESD protection.

The STP15NK50Z is suitable for many applications, including automotive, industrial and consumer electronic device applications. It is often used for boosting, inverting, and level shifting operations, or as an on-off switch between the power source and the load. It can also be used in applications such as DC/DC converters and switchmode power supplies, as well as in automotive applications such as DC/DC conversion, powertrain control, battery management, and brake-by-wire systems.

The working principle of the STP15NK50Z is simple. When a gate voltage is applied to the gate terminal, charge carriers are generated in the channel of the MOSFET, leading to an increase in the electrical conductivity of the channel, allowing current to flow between the source and drain terminals. This flow of current is controlled by the amount of voltage applied to the gate. When the gate voltage is increased, more charge carriers are generated, allowing more current to flow. When the gate voltage is decreased, fewer charge carriers are generated and the current flow is reduced.

The STP15NK50Z provides a practical solution in many electronic applications, as it features a low RDS(on) and low gate charge, making it more efficient than other MOSFETs. Additionally, its superior ESD protection ensures reliable operation in electrically noisy environments.

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