STP60NF03L Allicdata Electronics
Allicdata Part #:

497-12616-5-ND

Manufacturer Part#:

STP60NF03L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 60A TO-220
More Detail: N-Channel 30V 60A (Tc) 100W (Tc) Through Hole TO-2...
DataSheet: STP60NF03L datasheetSTP60NF03L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 5V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STP60NF03L is a N-Channel MOSFET, or metal-oxide-semiconductor field-effect transistor, used to control large amounts of current with a single device. It comes in a TO-220 package, a standard 5-pin (tabulated gate) configuration, and typically uses a voltage between 5 and 20 volts to turn it on. This MOSFET belongs to the SuperMESH family, with a power dissipation of up to 30 watts, a drain-source resistor of 4 mΩ (at 10 V) and a rDS(on) ratio that reduces with increased temperature. It is capable of handling as high as 60A of continuous current in a repetitive mode and up to 175A in a single pulse.

The STP60NF03L is used primarily in applications that require an efficient, reliable, and low-cost power switching solution. It is typically found in DC-DC inverters, chargers, and any other applications that require fast switching. This MOSFET can also be used in power supply units or voltage regulators, providing good efficiency and a low on-resistive path. Due to the low output capacitance and the low power dissipation, it is considered to be a reliable solution for powering electric retrogames when used in conjunction with an appropriate PCB design.

The STP60NF03L works by using a gate voltage to affect the flow of current between the drain and source terminals. To turn the transistor on, a voltage must be applied to the gate terminal that is greater than the voltage at the source terminal. Once this threshold is exceeded, current will begin to flow from the drain terminal to the source terminal. The amount of current that flows is determined by the non-saturated resistance, or rDS(on), of the device. The higher the applied gate voltage, the lower the rDS(on) becomes, thus allowing more current to flow. To turn the device off, the gate voltage must be reduced to zero or below the threshold, thus reducing the current flow to zero.

In summary, the STP60NF03L is an efficient, reliable and affordable N-channel MOSFET used for varying applications. It\'s low power dissipation and high current tolerance lends itself to being a reliable solution for powering electric retrogames in conjunction with an appropriate PCB design. It\'s gate-controlled high-power switching capability makes it a popular choice for DC-DC applications, power supply units and voltage regulators.

The specific data is subject to PDF, and the above content is for reference

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