Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	54nC @ 10V
Series:	STripFET™ III
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STP90N4F3 Application Field and Working Principle

The STP90N4F3 is a power MOSFET from STMicroelectronics with an indexed N-channel MOSFET that is suitable for a variety of uses such as low-side and high-side switching and power conversion applications. It is designed to offer high efficiency and increased power density thanks to its 4V gate drive.

The STP90N4F3 has an N-channel MOSFET with a maximum current rating of 90A, a drain-source breakdown voltage of 100V and a drain-gate resistance of 5 milliohms. The device also includes an internal temperature and current limit protection, which makes it ideal for providing overcurrent and overtemperature protection to the load. Furthermore, the device has a dynamic dV/dt and di/dt, which enables the device to have fast recovery time and a soft body diode for improved switching performance.

Working Principle

The STP90N4F3 works by controlling the flow of current through the MOSFET, which is a gated, voltage-controlled device, meaning that it can open or close a circuit by manipulating the voltage between two terminals. The MOSFET is controlled by an input signal, often referred to as the gate, which can vary between 0V and the threshold voltage of the particular device. If a positive voltage is applied to the gate terminal, the MOSFET will turn on and the drain current will flow, while the source voltage will remain at its bias voltage.

Once the MOSFET is on, the MOSFET will remain on until the gate voltage falls below the threshold voltage, at which point the MOSFET will begin to turn off by reducing its resistance and allowing the drain current to fall back to zero. This control of current enables the device to be used for many different applications, such as low-side and high-side switches and for controlling power levels in power conversion applications.

Application Fields

The STP90N4F3 is a power MOSFET from STMicroelectronics with an indexed N-channel MOSFET that is suitable for a variety of uses. It can be used in many application fields such as power conversion, low-frequency switching, high-frequency switching and circuit protection. In power conversion applications, the device can be used to control the voltage and current levels to ensure that devices are only drawing the amounts of power they can safely handle.

In low-frequency switching applications, the device can be used to switch between two power supplies or two components of an application. The device is capable of carrying higher currents up to a maximum current rating of 90A, making it suitable for higher wattage applications such as lights and motors.

In high-frequency switching applications, the device can be used to switch signals at much higher frequencies than low-frequency switching, which enables more efficient power conversion and increased power density. The device also includes an internal temperature and current limit protection, making it suitable for providing overcurrent and overtemperature protection to the load.

Finally, in circuit protection applications, the device can be used to protect the load from overcurrent and overtemperature damage. The device includes an internal current and temperature limit that will shut down the MOSFET if either one of those limits is exceeded. This makes the device suitable for providing protection to the load even in extreme conditions.

In conclusion, the STP90N4F3 is an indexed N-channel power MOSFET from STMicroelectronics suitable for a variety of uses. It can be used in power conversion, low-frequency and high-frequency switching, and circuit protection applications. It is designed to offer high efficiency and increased power density thanks to its 4V gate drive, dynamic dV/dt and di/dt, soft body diode, and internal temperature and current limit protection.

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