| Allicdata Part #: | 497-12622-5-ND |
| Manufacturer Part#: |
STP9NK70Z |
| Price: | $ 0.57 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 700V 7.5A TO-220 |
| More Detail: | N-Channel 700V 7.5A (Tc) 115W (Tc) Through Hole TO... |
| DataSheet: |  STP9NK70Z Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.57000 |
| 10 +: | $ 0.55290 |
| 100 +: | $ 0.54150 |
| 1000 +: | $ 0.53010 |
| 10000 +: | $ 0.51300 |
| Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 115W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1370pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
| Series: | SuperMESH™ |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.5A (Tc) |
| Drain to Source Voltage (Vdss): | 700V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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The STP9NK70Z is a N-channel MOSFET from STMicroelectronics, with its powerful overvoltage protection operation, it is widely used in power circuits. In this article, we are going to talk about its application field and working principle.
Application Field
When it comes to the application field of STP9NK70Z, it is mainly used for power circuits, including AC/DC Converters, DC/DC converters, SMPS, UPS and PC power supply. Due to its strong protection function, it can also be used in AGU, welders, relays and motor starters.
Working Principle
STP9NK70Z adopts an advanced N-channel MOSFET technology which is based on vertical power MOSFETs. STP9NK70Z consists of two MOSFETs (N1 and N2) at the source, while the other two MOSFETs (N3 and N4) are insulated from the source, with the drains connected to the source. The lower MOSFET (N1) conducts when the Vgs and Vds are both in the correct condition, and the upper MOSFET (N2) also conducts when the Vgs and Vds are in the correct condition. The two MOSFETs are coupled to each other, with N1 controlling the on-state and N2 controlling the off-state.
The power dissipation is proportional to the current and the threshold voltage of the MOSFET. As the threshold voltage increases, the voltage at which the source ‘clamps’ the gate voltage results in decreased power dissipation. The resulting improved performance gives STP9NK70Z the capability to endure high rise/fall times, fast switching frequencies and improved efficiency.
At high frequencies, the STP9NK70Z offers fast switching and robust overvoltage protection. The overvoltage protection includes both active and passive protection, it starts to work when a gate to source voltage (Vgs) of 20V is exceeded, the active protection reduces the output voltage and dissipates the overvoltage energy. At the same time, the passive protection extends the voltage to the safe range and protects the circuit from further damage.
Conclusion
The STP9NK70Z is an advanced N-channel MOSFET from STMicroelectronics. Its diverse application in power circuits and robust overvoltage protection makes it a great choice for power circuit design.
The specific data is subject to PDF, and the above content is for reference
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