STP90N55F4

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The STP90N55F4 is a power MOSFET that belongs to the STMicroelectronics Power MOSFET family. It is a insulated-gate field effect transistor (MOSFET) which is available in TO-220FP and TO-220 package.

The STP90N55F4 can be used in a wide variety of applications, including motor control, switching, and power management. Its broad operating range and low on-resistance make it suitable for a wide range of power switching applications, from small packages to high-power devices.

The STP90N55F4 can handle an input current (drain current) of up to 90A, a drain-source voltage of up to 55V and a total power dissipation of up to 145W, with a typical channel resistance of 1.2 mΩ.It has an Ld of 1.8 nH and an n-channel type of P-channel. It has a package mounted DirectFET4 and a protection D-MTM.

Working Principle

The STP90N55F4 is a P-channel MOSFET. It works by using an external voltage to move charge carriers through the P-channel, resulting in current flow. The P-channel acts as a resistor, controlled by an electrical signal, that regulates the flow of the current.

The device consists of a source and a drain, which are separated by an insulated gate. When an external voltage is applied to the gate, it will attract electrons away from the source and into the drain. This creates an impedance that can be used to regulate the amount of current flowing through the device.

When the voltage is removed, the electrons move back to the source, which reduces the impedance, allowing current to flow again. In this way, the device can be used to control the amount of current that is allowed to flow.

Advantages

The STP90N55F4 is suitable for a wide range of applications due to its low on-resistance, low gate charge, and high voltage ratings. This makes it an ideal choice for applications where power management and speed of response are important. It is also very efficient, drawing less power than traditional discrete power MOSFETs.

The device\'s high voltage ratings also make it suitable for a wide range of applications, from switching and motor control to power management. Because it is a P-channel type MOSFET, it is able to handle a wide range of voltages, and this makes it suitable for a variety of power switching applications, including those requiring high voltage ratings.

Disadvantages

There are a few limitations to the STP90N55F4\'s performance. It has a relatively low drain-source breakdown voltage, as well as a relatively high gate threshold voltage. In addition, its maximum drain current is limited, which means it is not suitable for high-current applications. Furthermore, its low thermal resistance also limits its performance in applications requiring high current.

In addition, the device does not have the same level of protection against overcurrent and overvoltage that some other MOSFETs have. As a result, it is not recommended for use in applications where high levels of protection are needed.

Conclusion

The STP90N55F4 is a power MOSFET that is well-suited for a wide range of applications. Its low on-resistance, low gate charge, and high voltage ratings make it suitable for applications where power management and speed of response are important. It is also very efficient and can handle a wide range of voltages due to its P-channel type construction.

However, it has some limitations, such as a low breakdown voltage, a high gate threshold voltage, and a low maximum drain current, which means it is not suitable for high-current applications. Furthermore, its lack of protection against overcurrent and overvoltage also limits its applications.

Overall, the STP90N55F4 is a good choice for many applications, and can be used to efficiently control the amount of current that is allowed to flow.

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