STP9NK60ZD Allicdata Electronics
Allicdata Part #:

497-4387-5-ND

Manufacturer Part#:

STP9NK60ZD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 7A TO-220
More Detail: N-Channel 600V 7A (Tc) 125W (Tc) Through Hole TO-2...
DataSheet: STP9NK60ZD datasheetSTP9NK60ZD Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Series: SuperFREDmesh™
Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STP9NK60ZD Application Field and Working Principle

The STP9NK60ZD MOSFET, or metal oxide semiconductor field effect transistor, is a type of electrical switch which is widely used in modern electronics. This particular MOSFET was developed by STMicroelectronics, a large semiconductor manufacturer, and is known for its favorable levels of performance and reliability. In the following sections, we will discuss the STP9NK60ZD\'s application field, along with its underlying principle of operation and its features.

Application Field

The STP9NK60ZD MOSFET is primarily intended for use in applications ranging from switching and motor control to audio amplification and voltage regulation. Due to its high-performance attributes and low on-resistance rating, it is particularly suitable for applications which require high switching speeds and low losses. As such, the STP9NK60ZD is often used in power electronics systems such as solar inverters and Uninterruptible Power Supplies (UPS) applications.

Working Principle

At its core, the STP9NK60ZD operates according to a principle known as the MOSFET principle of operation. This involves a process whereby an electric field is used to control the amount of current flowing through a central conducting channel, known as the source terminal. In other words, the source terminal acts as a "gate" which can be opened or closed by increasing or decreasing the electric field. When the electric field is increased, the gate opens and allows current to flow, leading to a low resistance state and a high conducting state.

In the case of the STP9NK60ZD, this electric field is generated by applying a small voltage at the gate terminal, which then controls the current flow through the channel. This voltage is known as the Gate-to-Source voltage. The voltage level is low enough so as not to allow excessive power dissipation in the MOSFET, while providing sufficient control over the current flow. This low voltage control makes the STP9NK60ZD ideal for use in applications where a low on-resistance rating is required.

Features

The STP9NK60ZD offers a number of features which make it an attractive solution for various applications. Firstly, the MOSFET offers a low amount of on-resistance (RDS(on)) for a given amount of voltage. This is partly due to its advanced structure, featuring p-channel and dual-die structure, which help to reduce its sensitivity to resistance. Furthermore, the STP9NK60ZD has a very low gate-to-source voltage (Vgs) required for operation. This is important for applications which require a low-power consumption.

The MOSFET is also equipped with boot-strap diodes and dynamic diodes which are used to further reduce on-resistance and provide ESD protection. Additionally, its dynamic diodes increase the device\'s maximum operation temperature and reliability, while the boot-strap diodes help to reduce ringing. Finally, its internal circuitry is designed such that the device remains in an off-state unless the gate-to-source voltage is sufficiently high.

Conclusion

In conclusion, the STP9NK60ZD MOSFET is a highly versatile electrical switch suitable for a wide range of applications. With its low on-resistance and low gate-to-source voltage, it is particularly well-suited for power electronics applications such as solar inverters and Uninterruptible Power Supplies (UPS). Furthermore, the device offers a number of features such as dynamic diodes, boot-strap diodes, and a maximum operation temperature which increase its overall performance. In summary, the STP9NK60ZD is a reliable, high-performance switch suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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