Allicdata Part #: | 497-3203-5-ND |
Manufacturer Part#: |
STP9NK50Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 7.2A TO-220 |
More Detail: | N-Channel 500V 7.2A (Tc) 110W (Tc) Through Hole TO... |
DataSheet: | STP9NK50Z Datasheet/PDF |
Quantity: | 40 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP9NK50Z is a single N-channel MOSFET transistor, also known as an insulated-gate field-effect transistor (IGFET). It is designed for high speed, low-power switching applications, most commonly in audio amplifiers and other switching applications, such as motor control.
The STP9NK50Z is a vertical DMOS transistor, which means that it typically has a more efficient structure and is capable of larger currents than conventional planar MOSFETs. It also features a lowered on-resistance, resulting in less dissipation, and higher efficiency than a comparable device.
The STP9NK50Z is based on the popular STP9NK50T, an advanced semiconductor structure that combines two thin-film DMOS transistors and two metal-oxide-semiconductor (MOS) transistors inside the same package. This allows the device to offer higher speed, lower emissions, and a larger safe operating area while providing a simplified assembly and test process.
The STP9NK50Z has a maximum voltage rating of 500V, and a maximum drain-source current rating of 9A. Its drain-source breakdown voltage (BVDSS) is approximately 500V, and its continuous drain current (ID) is approximately 9A. It has a gate-source cutoff voltage (VGS(off)) of around -2.5V and an on-resistance (RDS(on)) of around 0.040Ω. The device is rated for operating temperatures of -55°C to 175°C.
Working principle of the STP9NK50Z: The STP9NK50Z is a voltage controlled device. It works by using the charge stored on its gate, as well as any external voltage applied to it, to control the amount of current that can flow through it. When a voltage is applied to the gate, it creates a potential barrier between the drain and the source, preventing current from flowing. This is known as the OFF state of the device. When the voltage on the gate decreases, the potential barrier weakens and current can then flow through the transistor, known as the ON state. The STP9NK50Z can be used to control the amount of current, for switching applications such as motor control.
The STP9NK50Z is suitable for a wide variety of medium power applications, from consumer electronics to industrial automation. It is an excellent choice for high efficiency, high frequency switch mode power supplies, as well as audio and motor control circuits, due to its low on-resistance and high frequency operation. It can also be used in audio amplifiers and power management applications. It is ideal for power saving mechanisms like power gating, as well as in switch-mode lighting and LCD backlighting.
In conclusion, the STP9NK50Z is a single N-channel MOSFET transistor designed for high speed, low-power switching applications. Its structure and capabilities make it suitable for a wide range of medium power applications. It is an excellent choice for high efficiency, high frequency switch mode power supplies, as well as audio and motor control circuits, due to its low on-resistance and high frequency operation.
The specific data is subject to PDF, and the above content is for reference
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