Allicdata Part #: | 497-12057-5-ND |
Manufacturer Part#: |
STP9NK50ZFP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 7.2A TO-220FP |
More Detail: | N-Channel 500V 7.2A (Tc) 30W (Tc) Through Hole TO-... |
DataSheet: | STP9NK50ZFP Datasheet/PDF |
Quantity: | 410 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP9NK50ZFP is a N-channel enhanced-mode MOSFET transistor. It is one of the members of the STMicroelectronics STPOWER technology range, designed for high efficiency and improved integration in order to reduce the size and cost of the end application. This MOSFET has been designed for power switching applications, especially for high spead switching applications where a low gate charge is required. It has a wide drain source voltage range from 0 to 500V, with a relatively low on-resistance of 92 mΩ and a maximum on-state drain current of 9A. It also has a high gain (hFE) of 270. It is suitable for use in motor control, UPS, AC/DC converters, TV SMPS and class D amplifier applications.
The STP9NK50ZFP is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor), one of the two main types of transistors used in electronics (the other type being the BJT, or bipolar junction transistor). It is similar to the BJT in that it is a current-controlled device, meaning it can act as an amplifier or switch, but it has some key differences in both its construction and operation. The MOSFET differs from BJT transistors by having two insulated plates, known as a “gate” and a “source”, on the top surface of its semiconductor material, usually a silicon material. The gate and source are connected to an electric field which, when the correct voltage is applied, will cause electrons to be attracted to the gate and move through the channel formed between the gate and the source. The electric field will also repel any electrons which try to enter the channel, allowing for very precise control of the current flow and allowing for higher switching speeds than could be achievable with a BJT.
The STP9NK50ZFP has a depletion-mode design, meaning that it will not turn on until a positive voltage is applied to the gate and will remain on as long as the gate voltage is greater than the source and drain. Furthermore, it has an “enhanced-mode” architecture, meaning that the gate current is reduced in order to reduce the gate-source voltage required to move the device from the off-state to the on-state. This reduced gate current also results in a lower gate charge and improved switching performance, making it suitable for high-speed switching applications.
The STP9NK50ZFP is a popular choice for many power switching applications due to its wide drain source voltage range, low gate charge and high gain rating. It is suitable for use in AC/DC converters, TV SMPS and class D amplifier applications, as well as motor control and UPS applications. Its enhanced-mode architecture also makes it suitable for high-speed switching applications. By taking advantage of its features, engineers are able to reduce the size and cost of the end application while simultaneously increasing its efficiency and providing a reliable solution.
The specific data is subject to PDF, and the above content is for reference
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