STP90N6F6

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	136W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4295pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	74.9nC @ 10V
Series:	DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs:	6.8 mOhm @ 38.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	84A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<p>The STP90N6F6 is a N-Channel enhancement mode vertical DMOS field-effect transistor specially designed for high-voltage applications up to 800V. This makes it useful to be used in mobile communications, home appliances, automobiles, and engineering robots. This type of transistor is exceptionally resistant to high-energy transients, making it impressive for the applications it is aimed for. This article will explain the STP90N6F6 application field and discuss the working principle of this type of power MOSFET. </p><p>The applications of the STP90N6F6 power MOSFET are diverse and extensive as they can be used in multiple areas of an electronic circuit, such as a power supply, an amplifier, and a switching circuit. Its 800V brute blocking voltage is exceptionally advantageous and can be used in various industrial motor drives, low-frequency power supplies, battery charging and discharging, and high-power switching devices. Additionally, the STP90N6F6 has a maximum safe operating area of 0.2 A/800V, allowing it to operate under very high current conditions, allowing it to open or close a circuit depending on the amount of current being applied. </p><p>The STP90N6F6 circuitry is organized in three parts. The first part consists of the n-type metal–oxide–semiconductor field-effect transistor (MOSFET) that is used as the main power device. It is responsible for controlling the flow of current between the drain and source terminals. The second part consists of a gate-current source, which applies a gate voltage to the MOSFET’s gate terminal. This voltage is used to control the amount of current flowing through the MOSFET. The third part, an error amplifier, stabilizes the gate-current source and ensures that the gate voltage is kept within its limits. </p><p>The working principle of the STP90N6F6 is that the metal–oxide–semiconductor field-effect transistor (MOSFET) acts as a resistor, controlling the flow of current between the drain and source terminals when a voltage is applied to its gate terminal. This gate voltage can be positive, negative, or zero (which is referred to as an off state). A positive gate voltage will open the resistive channel of the MOSFET and allow current to flow; a negative gate voltage will close the resistive channel, preventing current from flowing through the MOSFET; and an off state will cause the MOSFET to act as an insulator, preventing any current from flowing. The gate current source supplied to the MOSFET is usually very small, allowing the MOSFET to regulate the amount of current flowing through it efficiently. </p><p>In summary, the STP90N6F6 is a power MOSFET used in various applications such as motor drives, low-frequency power supplies, battery charging and discharging, and high-power switching devices. Its 800V brute blocking voltage makes it resistant to high-energy transients, while its gate-current source ensures that the gate voltage is kept within its limits. The working principle of the STP90N6F6 is that the MOSFET acts as a resistor, with its resistive channel controlled by the amount of voltage applied to its gate terminal.</p>

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