STP9N80K5

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The STP9NK80K5 is a low gate charge and high current N-channel MOSFET designed for high current, low frequency applications. The design of the STP9NK80K5 allows operation with higher drain source voltage (Vdss) while allowing operation of upto 10A. It is constructed with a double-diffused insulator technology and can handle high current leakage at lower drain source voltages while still providing low capacitive charge with high power efficiency.

The STP9NK80K5 is a N-Channel Enhancement Mode MOSFET that utilizes vertical Celetec Patent Assisted Structure (Celetec-PAS) for low gate charge and high temperature ruggedness. It is a self-aligned trench MOSFET with an enhanced bottom cell structure that is high temperature stable. The STP9NK80K5 has a maximum drain-source voltage of 800V and can support drain-source current of up to 8A. It has a maximum drain-gate voltage of 20V and can handle a maximum power dissipation of up to 140W. The STP9NK80K5 is a logic-level drive MOSFET, with a turn-on voltage of 4.5V and a turn-off voltage of 2V.

The main feature of the STP9NK80K5 is its low gate charge. This is provided by Celetec-PAS, which employs an advanced vertical N-channel MOSFET topology that reduces the gate latency. The low gate charge results in faster switching, which reduces switching losses, provides better system efficiency, and gives the device a longer useful life. The device also features low Miller capacitance, which is useful in applications where high switching frequencies are required. It also uses a charge pump circuit to reduce power dissipation, resulting in improved efficiency.

The STP9NK80K5 is suitable for a wide range of power applications, including power supplies, motor drives, and electrical appliances that require high current switching. In power supplies, it can be used for step down converters, buck converters, and inverters. In motor drives, it can be used for AC motor drives and brushless DC motor drives. In electrical appliances, it can be used for dimmers, high power LED drivers, and HVAC systems. The device is also suitable for telecom, automotive, and industrial applications.

The working principle of the STP9NK80K5 is relatively simple. When a positive gate-source voltage (Vgs) is applied to the device, a channel is created between the drain and source terminals. This creates a low resistance path for current to flow from the source to the drain. As the current flow increases, the voltage drop across the device also increases and is proportional to the current through the device. The drain current (Id) can be controlled by varying the gate-source voltage. When the gate-source voltage is reduced, the device enters its linear region, where the source-drain current is directly proportional to the gate-source voltage.

In summary, the STP9NK80K5 is a high power, low gate charge N-channel MOSFET designed for low frequency applications. It utilizes Celetec-PAS to provide low gate charge and high temperature stability. It is suitable for a wide range of applications such as power supplies, motor drives, and electrical appliances that require high current switching. The device works by creating a channel between the drain and source terminals, allowing current to flow through the device. The current flow can be controlled by varying the gate-source voltage, allowing for precise control of the drain current.

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