Allicdata Part #: | 497-7537-5-ND |
Manufacturer Part#: |
STP9NM50N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 7.5A TO-220 |
More Detail: | N-Channel 500V 5A (Tc) 70W (Tc) Through Hole TO-22... |
DataSheet: | STP9NM50N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 560 mOhm @ 3.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP9NM50N is a single N-channel power MOSFET (metal-oxide-semiconductor field-effect transistor). It is a particularly efficient type of FET (field-effect transistor) for controlling power transmission. As a high current electronic switch, it is suitable for high current applications including motor control, loads, switching power supplies, power amplifiers, and more.
The STP9NM50N has a peak drain current of 9A, a drain-source voltage rating of 500V, and a package style of TO-220-3. It is offered in a TO-220-3 package, or in a TO-220F-3 package with several features, such as an isolated tab and extended source bottom lead. Its gate dielectric is composed of a silicon nitride film.
The major feature of the STP9NM50N is its superior switching performance. Due to its low on-state resistance, it can rapidly switch and provides fast rise and fall times. Its low input capacitance and low gate charge reduce switching losses and make switching faster. Also, its low output capacitance makes it highly reliable in pulsed and circuit conditions. This is especially advantageous for DC-DC converters and other power switching requirements in complex and sensitive circuits.
As for its working principle, the STP9NM50N utilizes the standard gate-source configuration and is operated by applying a voltage from gate to the source terminals. This voltage creates a strong electric field between the gate and the channel inside the substrate, introducing the N-type MOSFET which allows current to flow. To turn off the MOSFET, the gate voltage is essentially reversed and the electric field between the gate and the substrate surface is neutralized. This action essentially shuts off the current and prevents any further current transmission.
The STP9NM50N is mainly used in loads, switching power supplies, motor controls, LED lighting, power amplifiers, and other applications where a high current, ultra-low resistance, fast switching solution is desired. In terms of load applications, due to its low on-state resistance and easy gate charge, it is excellent for switches and dimmers. It can also be used in switching power supplies as a power switch. In motor control, it is used to control large external loads such as windings in motor drives.
Overall, the STP9NM50N is a reliable and efficient single N-channel MOSFET, particularly beneficial in controlling current in complex or sensitive high current applications. Its low on-state resistance, low gate charge, and small output capacitance make it suitable for fast switching and power control.}.
The specific data is subject to PDF, and the above content is for reference
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