Allicdata Part #: | 497-10307-5-ND |
Manufacturer Part#: |
STP95N3LLH6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 80A TO-220 |
More Detail: | N-Channel 30V 80A (Tc) 70W (Tc) Through Hole TO-22... |
DataSheet: | STP95N3LLH6 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Series: | DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STP95N3LLH6 is a unique type of field effect transistor (FET). This particular FET is a type of N-Channel MOSFET that is known for its excellent power conversion efficiency at low temperature. The STP95N3LLH6 model has a 25 V voltage drop across the Drain-Source with a relatively low on resistance. The Power Datasheet for this model FET also specifies a very low gate charge as well as an extremely fast switching time.
What makes this particular FET unique is its ability to handle both electrical and mechanical loads without major impairment. This is due to its ability to operate in both high and low temperatures, as well as its flexibility with signal rates and input voltages. The fact that the FET is able to operate at both the low and high temperatures also makes it ideal for applications that require low noise and well-regulated current levels.
The STP95N3LLH6 model FET can be used in a variety of applications. Common applications include switching power supplies and power factor correction circuitry. It is also used for medical imaging and machine vision applications. In addition, this particular N-Channel MOSFET can be used for various logic control applications such as pulse-width modulation (PWM). The FET can also be used for voltage or current regulation.
The STP95N3LLH6 model operates on the principle of a FET, which is an electronic component made of three distinct parts. These parts are the gate, the drain and the source. The gate acts as a switch that can be turned on or off by applying a voltage called the gate voltage. The drain and source act as the terminals that control the flow of current. The gate voltage can be applied either with a mechanical or electrical signal, depending on the type of application.
The operation of the FET is relatively simple and is explained as follows: A DC voltage is applied to the gate, which then creates an electrical field. This field either opens or closes an electrical circuit between the source and the drain. If the gate is opened, current flows from the drain to the source, allowing the load to be switched on and off. If the gate is closed, current will not be able to flow, and the load will remain off. This switching action is used to control the current, voltage, frequency and other parameters of the application.
The STP95N3LLH6 model is a good choice for many applications because of its low power consumption, low on-resistance, fast switching time and high flexibility in terms of input voltages and signal rates. This makes it suitable for use in switching power supplies, machine vision and medical imaging applications, as well as power factor correction circuitry. In addition, this FET can also be used for other logic control applications such as pulse-width modulation.
The specific data is subject to PDF, and the above content is for reference
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